SCHEMBL5410345

SCHEMBL5410345

COc1cccc([SiH2]CC[Si](CC[SiH2]c2cccc(OC)c2OC)(CC[SiH2]c2cccc(OC)c2OC)CC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.42
KDM4E B2RXH2 3/20 0.38
MAPT P10636 1/20 0.38
HSD17B10 Q99714 1/20 0.38
KMT2A Q03164 3/20 0.36
MEN1 O00255 2/20 0.36
NFE2L2 Q16236 3/20 0.36
HPGD P15428 1/20 0.35
NQO2 P16083 1/20 0.35
MAPK1 P28482 1/20 0.35
MGAM O43451 1/20 0.35
GAA P10253 1/20 0.35
SI P14410 1/20 0.35
MGAM2 Q2M2H8 1/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
POLB P06746 1/20 0.35
ALDH1A1 P00352 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
BRD4 O60885 1/20 0.35
CA12 O43570 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5413062 0.90 SMN1; SMN2 (0.43) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL5413359 0.89 SMN1; SMN2 (0.42) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL5414850 0.88 SMN1; SMN2 (0.41) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL5410271 0.88 SMN1; SMN2 (0.41) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL702408 0.88 SMN1; SMN2 (0.48) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL647735 0.84 SMN1; SMN2 (0.50) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL703492 0.84 SMN1; SMN2 (0.50) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL5415008 0.83 SMN1; SMN2 (0.44) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A
SCHEMBL7804610 0.83 SMN1; SMN2 (0.44) SMN1; SMN2KDM4EMAPTHSD17B10NFE2L2
SCHEMBL21066749 0.81 SMN1; SMN2 (0.43) SMN1; SMN2KDM4EMAPTHSD17B10KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed