SCHEMBL5414850

SCHEMBL5414850

COc1cccc([SiH2]CCCCC[Si](CCCCC[SiH2]c2cccc(OC)c2OC)(CCCCC[SiH2]c2cccc(OC)c2OC)CCCCC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.41
HPGD P15428 1/20 0.35
KDM4E B2RXH2 3/20 0.35
MAPT P10636 2/20 0.35
HSD17B10 Q99714 1/20 0.35
KMT2A Q03164 4/20 0.34
MEN1 O00255 3/20 0.34
LMNA P02545 2/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
NAMPT P43490 1/20 0.33
NFE2L2 Q16236 2/20 0.33
ALDH1A1 P00352 2/20 0.32
POLB P06746 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
MGAM O43451 1/20 0.32
GAA P10253 1/20 0.32
SI P14410 1/20 0.32
MGAM2 Q2M2H8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5410271 1.00 SMN1; SMN2 (0.41) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5413359 0.98 SMN1; SMN2 (0.42) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5413062 0.94 SMN1; SMN2 (0.43) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL703492 0.89 SMN1; SMN2 (0.50) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5410345 0.88 SMN1; SMN2 (0.42) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL647735 0.86 SMN1; SMN2 (0.50) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5425698 0.82 SMN1; SMN2 (0.41) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5415461 0.82 SMN1; SMN2 (0.41) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5419951 0.82 SMN1; SMN2 (0.41) SMN1; SMN2HPGDKDM4EMAPTHSD17B10
SCHEMBL5410299 0.82 SMN1; SMN2 (0.41) SMN1; SMN2HPGDKDM4EMAPTHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed