SCHEMBL5410445

SCHEMBL5410445

COc1cccc([SiH2]CCCCCCC(C)(CCCCCC[SiH2]c2cccc(OC)c2OC)CCCCCC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.40
CNR1 P21554 2/20 0.39
CNR2 P34972 2/20 0.39
MAPK1 P28482 3/20 0.33
MAPT P10636 3/20 0.33
HPGD P15428 2/20 0.33
GAA P10253 2/20 0.33
KDM4E B2RXH2 2/20 0.33
ALDH1A1 P00352 2/20 0.33
LMNA P02545 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
POLB P06746 1/20 0.33
TSHR P16473 1/20 0.33
CRHBP P24387 1/20 0.33
CRHR2 Q13324 1/20 0.33
NFE2L2 Q16236 2/20 0.32
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
HSD17B10 Q99714 1/20 0.31
CYP1A2 P05177 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5419278 0.99 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5410092 0.94 SMN1; SMN2 (0.42) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5419951 0.90 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5410619 0.90 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5417644 0.88 SMN1; SMN2 (0.42) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5419595 0.88 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL703492 0.88 SMN1; SMN2 (0.50) SMN1; SMN2MAPK1MAPTHPGDKDM4E
SCHEMBL5417109 0.87 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5415262 0.87 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5404758 0.87 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2MAPK1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed