SCHEMBL5410092

SCHEMBL5410092

COc1cccc([SiH2]CCCC(C)(CCC[SiH2]c2cccc(OC)c2OC)CCC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 3/20 0.42
CNR1 P21554 1/20 0.36
CNR2 P34972 1/20 0.36
MAPK1 P28482 3/20 0.34
MAPT P10636 3/20 0.34
HPGD P15428 2/20 0.34
GAA P10253 2/20 0.34
KDM4E B2RXH2 2/20 0.34
ALDH1A1 P00352 2/20 0.34
LMNA P02545 2/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
POLB P06746 1/20 0.34
TSHR P16473 1/20 0.34
CRHBP P24387 1/20 0.34
CRHR2 Q13324 1/20 0.34
NFE2L2 Q16236 3/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
HSD17B10 Q99714 1/20 0.33
CYP1A2 P05177 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5419278 0.95 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5410445 0.94 SMN1; SMN2 (0.40) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5419595 0.91 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5425306 0.89 SMN1; SMN2 (0.43) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL647735 0.87 SMN1; SMN2 (0.50) SMN1; SMN2MAPK1MAPTHPGDKDM4E
SCHEMBL703492 0.87 SMN1; SMN2 (0.50) SMN1; SMN2MAPK1MAPTHPGDKDM4E
SCHEMBL5412463 0.87 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5417644 0.85 SMN1; SMN2 (0.42) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5417647 0.84 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2MAPK1MAPT
SCHEMBL5419951 0.84 SMN1; SMN2 (0.41) SMN1; SMN2CNR1CNR2MAPK1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed