SCHEMBL5419595

SCHEMBL5419595

COc1cccc([SiH2]CCC(C)(CC[SiH2]c2cccc(OC)c2OC)CC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.41
MAPK1 P28482 3/20 0.35
GAA P10253 2/20 0.35
KDM4E B2RXH2 2/20 0.35
TSHR P16473 2/20 0.35
ALDH1A1 P00352 1/20 0.35
POLB P06746 1/20 0.35
CRHBP P24387 1/20 0.35
CRHR2 Q13324 1/20 0.35
NFE2L2 Q16236 4/20 0.35
CNR1 P21554 1/20 0.34
CNR2 P34972 1/20 0.34
MAPT P10636 2/20 0.34
HSD17B10 Q99714 1/20 0.34
CA12 O43570 2/20 0.33
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
CA14 Q9ULX7 2/20 0.33
CA4 P22748 1/20 0.33
CA7 P43166 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5410092 0.91 SMN1; SMN2 (0.42) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL5419278 0.89 SMN1; SMN2 (0.41) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL5404842 0.89 SMN1; SMN2 (0.42) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL5410445 0.88 SMN1; SMN2 (0.40) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL702408 0.86 SMN1; SMN2 (0.48) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL5417339 0.86 SMN1; SMN2 (0.40) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL5423963 0.83 SMN1; SMN2 (0.43) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL5420256 0.83 SMN1; SMN2 (0.38) SMN1; SMN2MAPK1GAAKDM4ETSHR
SCHEMBL647735 0.83 SMN1; SMN2 (0.50) SMN1; SMN2MAPK1KDM4ETSHRALDH1A1
SCHEMBL703492 0.83 SMN1; SMN2 (0.50) SMN1; SMN2MAPK1KDM4ETSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed