SCHEMBL5412463

SCHEMBL5412463

COc1cccc([SiH2]CCCC([SiH3])(CCC[SiH2]c2cccc(OC)c2OC)CCC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.41
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33
NFE2L2 Q16236 3/20 0.33
HPGD P15428 2/20 0.33
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
KDM4E B2RXH2 2/20 0.32
MAPT P10636 2/20 0.32
ALDH1A1 P00352 2/20 0.32
CYP2D6 P10635 2/20 0.32
HSD17B10 Q99714 1/20 0.32
CYP1A2 P05177 1/20 0.32
MAPK1 P28482 3/20 0.32
LMNA P02545 2/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
ALOX5 P09917 1/20 0.31
PTGS2 P35354 1/20 0.31
TSHR P16473 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412598 0.96 SMN1; SMN2 (0.40) SMN1; SMN2CNR1CNR2NFE2L2HPGD
SCHEMBL5404758 0.94 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2NFE2L2HPGD
SCHEMBL5417109 0.94 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2NFE2L2HPGD
SCHEMBL5417339 0.91 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2KDM4EMAPTALDH1A1
SCHEMBL5425306 0.88 SMN1; SMN2 (0.43) SMN1; SMN2CNR1CNR2NFE2L2HPGD
SCHEMBL5410092 0.87 SMN1; SMN2 (0.42) SMN1; SMN2CNR1CNR2NFE2L2HPGD
SCHEMBL647735 0.86 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2HPGDMEN1KMT2A
SCHEMBL703492 0.86 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2HPGDMEN1KMT2A
SCHEMBL5417647 0.86 SMN1; SMN2 (0.39) SMN1; SMN2CNR1CNR2NFE2L2HPGD
SCHEMBL5412943 0.84 SMN1; SMN2 (0.40) SMN1; SMN2CNR1CNR2NFE2L2HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed