SCHEMBL5415461

SCHEMBL5415461

COc1cccc([SiH2]CCCCCC(CCCCC[SiH2]c2cccc(OC)c2OC)CCCCC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.41
NFE2L2 Q16236 4/20 0.33
HPGD P15428 2/20 0.33
MAPT P10636 3/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
KDM4E B2RXH2 1/20 0.32
HSD17B10 Q99714 1/20 0.32
ALDH1A1 P00352 1/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
MAPK1 P28482 2/20 0.32
LMNA P02545 3/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
ALOX5 P09917 1/20 0.31
PTGS2 P35354 1/20 0.31
NAMPT P43490 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5410299 1.00 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5417193 0.98 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5423803 0.94 SMN1; SMN2 (0.43) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL703492 0.89 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5420968 0.88 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2MAPTKDM4EHSD17B10
SCHEMBL647735 0.86 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5410271 0.82 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5414850 0.82 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5425698 0.82 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2HPGDMAPTMEN1
SCHEMBL5419951 0.82 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2HPGDMAPTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed