SCHEMBL5425698

SCHEMBL5425698

COc1cccc([SiH2]CCCCCC[SiH](CCCCCC[SiH2]c2cccc(OC)c2OC)CCCCCC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 3/20 0.41
TSHR P16473 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
NFE2L2 Q16236 3/20 0.33
HPGD P15428 1/20 0.33
MAPT P10636 2/20 0.32
ALDH1A1 P00352 2/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
KDM4E B2RXH2 1/20 0.32
HSD17B10 Q99714 1/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
MAPK1 P28482 1/20 0.32
NPC1 O15118 2/20 0.31
LMNA P02545 1/20 0.31
RAB9A P51151 1/20 0.31
ALOX5 P09917 1/20 0.31
PTGS2 P35354 1/20 0.31
CHRM2 P08172 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5415335 1.00 SMN1; SMN2 (0.41) SMN1; SMN2TSHRL3MBTL1NFE2L2HPGD
SCHEMBL5420335 0.98 SMN1; SMN2 (0.42) SMN1; SMN2TSHRL3MBTL1NFE2L2HPGD
SCHEMBL5412493 0.94 SMN1; SMN2 (0.43) SMN1; SMN2TSHRL3MBTL1NFE2L2HPGD
SCHEMBL703492 0.89 SMN1; SMN2 (0.50) SMN1; SMN2TSHRL3MBTL1NFE2L2HPGD
SCHEMBL5414911 0.88 SMN1; SMN2 (0.42) SMN1; SMN2TSHRL3MBTL1NFE2L2MAPT
SCHEMBL647735 0.86 SMN1; SMN2 (0.50) SMN1; SMN2TSHRL3MBTL1NFE2L2HPGD
SCHEMBL5410271 0.82 SMN1; SMN2 (0.41) SMN1; SMN2L3MBTL1NFE2L2HPGDMAPT
SCHEMBL5410299 0.82 SMN1; SMN2 (0.41) SMN1; SMN2L3MBTL1NFE2L2HPGDMAPT
SCHEMBL5414850 0.82 SMN1; SMN2 (0.41) SMN1; SMN2L3MBTL1NFE2L2HPGDMAPT
SCHEMBL5415461 0.82 SMN1; SMN2 (0.41) SMN1; SMN2L3MBTL1NFE2L2HPGDMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed