SCHEMBL5419905

SCHEMBL5419905

CO[Si](OC)(c1ccccc1)C(C)([Si](OC)(OC)c1ccccc1)[Si](OC)(OC)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.36
CA4 P22748 2/20 0.35
ALDH1A1 P00352 2/20 0.33
ALOX15 P16050 1/20 0.33
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
POLB P06746 1/20 0.31
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
CA9 Q16790 1/20 0.31
CA14 Q9ULX7 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
KCNN4 O15554 1/20 0.30
LTA4H P09960 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL277279 0.86 MAPK1 (0.36) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL5417903 0.83 POLB (0.37) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL432652 0.82 MAPK1 (0.33) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL5416463 0.77 MAPK1 (0.38) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL707057 0.72 NR1H2 (0.30) NR1H2NR1H3
SCHEMBL704188 0.71 MAPK1 (0.36) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL702695 0.71 MAPK1 (0.36) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL15405495 0.71 NR1H2 (0.33) ESR1ESR2NR1H2NR1H3
SCHEMBL646249 0.71 CA4 (0.43) MAPK1CA4ALDH1A1ESR1ESR2
SCHEMBL1224337 0.70 CA4 (0.38) MAPK1CA4ALDH1A1ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed