SCHEMBL702695

SCHEMBL702695

CO[Si](c1ccccc1)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 2/20 0.36
POLB P06746 1/20 0.35
CA4 P22748 2/20 0.35
ALDH1A1 P00352 4/20 0.33
ALOX15 P16050 1/20 0.33
KDM4E B2RXH2 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
CA9 Q16790 1/20 0.31
CA14 Q9ULX7 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
KCNN4 O15554 1/20 0.30
LTA4H P09960 1/20 0.30
CYP1A2 P05177 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708231 0.87 NR1H2 (0.30) NR1H2NR1H3
SCHEMBL705719 0.79 MAPK1 (0.34) MAPK1POLBALDH1A1ALOX15ESR1
SCHEMBL711562 0.77 CA4 (0.37) MAPK1CA4ALDH1A1ALOX15ESR1
SCHEMBL277279 0.76 MAPK1 (0.36) MAPK1POLBCA4ALDH1A1ALOX15
SCHEMBL704188 0.76 MAPK1 (0.36) MAPK1POLBCA4ALDH1A1ALOX15
SCHEMBL714783 0.76 RIPK1 (0.34) MAPK1ALDH1A1ALOX15
SCHEMBL703501 0.76 LTA4H (0.32) MAPK1ALDH1A1ALOX15KDM4ESMN1; SMN2
SCHEMBL1313821 0.74 ESR1 (0.35) MAPK1POLBCA4ALDH1A1ALOX15
SCHEMBL17635119 0.74 ESR1 (0.35) MAPK1POLBCA4ALDH1A1ALOX15
SCHEMBL706222 0.73 CA4 (0.37) MAPK1CA4ALDH1A1ALOX15ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed