SCHEMBL5404842

SCHEMBL5404842

COc1cccc([SiH2]CCC(CC[SiH2]c2cccc(OC)c2OC)(CC[SiH2]c2cccc(OC)c2OC)CC[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.42
NFE2L2 Q16236 6/20 0.36
MAPK1 P28482 2/20 0.35
KDM4E B2RXH2 2/20 0.35
MAPT P10636 1/20 0.35
HSD17B10 Q99714 1/20 0.35
CA12 O43570 2/20 0.34
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA14 Q9ULX7 2/20 0.34
CA4 P22748 1/20 0.34
CA7 P43166 1/20 0.34
CA9 Q16790 1/20 0.34
TSHR P16473 2/20 0.33
POLB P06746 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
ABCB1 P08183 1/20 0.33
ABCG2 Q9UNQ0 1/20 0.33
ALDH1A1 P00352 1/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5425306 0.90 SMN1; SMN2 (0.43) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL5417644 0.89 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL5419595 0.89 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL5410619 0.88 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL5419951 0.88 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL702408 0.88 SMN1; SMN2 (0.48) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL5417339 0.87 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL5420256 0.84 SMN1; SMN2 (0.38) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL647735 0.84 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT
SCHEMBL703492 0.84 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2MAPK1KDM4EMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed