SCHEMBL5447290

SCHEMBL5447290

C=CC(=O)OC12CC3CC(CC(C3)C1)C2.Cc1cccc(C=CC=Cc2ccc(O)cc2)c1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MMP1 P03956 3/20 0.38
MMP2 P08253 3/20 0.38
MMP9 P14780 3/20 0.38
RELA Q04206 1/20 0.36
TTR P02766 1/20 0.36
EPHX2 P34913 1/20 0.35
MAOB P27338 1/20 0.35
LMNA P02545 1/20 0.35
RAB9A P51151 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
ESR1 P03372 3/20 0.35
HDAC1 Q13547 2/20 0.35
HDAC8 Q9BY41 2/20 0.35
HDAC6 Q9UBN7 2/20 0.35
HDAC7 Q8WUI4 1/20 0.35
HDAC11 Q96DB2 1/20 0.35
ALOX5 P09917 1/20 0.34
PTGS1 P23219 1/20 0.34
PTGS2 P35354 1/20 0.34
RARA P10276 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5449120 0.91 MAPT (0.40) MMP1MMP2MMP9MAOBRAB9A
SCHEMBL5435451 0.89 AKR1B10 (0.38) RELATTRMAOBRAB9AESR1
SCHEMBL5450379 0.88 MMP1 (0.37) MMP1MMP2MMP9RELATTR
SCHEMBL5446080 0.83 CYP1A2 (0.37) LMNARAB9ASMN1; SMN2ESR1HDAC1
SCHEMBL5449150 0.83 ESR1 (0.39) ESR1HDAC1HDAC8HDAC6HDAC7
SCHEMBL5455488 0.83 CYP17A1 (0.37) LMNARAB9ASMN1; SMN2ESR1HDAC1
SCHEMBL3841430 0.81 MAPT (0.38) RAB9AESR1HDAC1HDAC8HDAC6
SCHEMBL5450986 0.81 THRB (0.46) MAOBESR1HDAC1HDAC8HDAC6
SCHEMBL5440495 0.80 KMT2A (0.41) RAB9ASMN1; SMN2ESR1HDAC1HDAC8
SCHEMBL5447304 0.80 THRB (0.45) LMNAESR1PTGS1PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed