SCHEMBL5458683

SCHEMBL5458683

CCCCO[Si](C)(C)O[Si](C)(O[Si](C)(C)OCCCC)O[Si](C)(C)OCCCC

nearest known ligand 0.36

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.36
ADRB1 P08588 1/20 0.36
ADRB3 P13945 1/20 0.36
CYP3A4 P08684 1/20 0.32
TSHR P16473 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.31
ALDH1A1 P00352 1/20 0.31
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2958971 0.93 ADRB2 (0.35) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL2950261 0.90 TSHR (0.40) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL18031772 0.85 ADRB2 (0.42) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL5465349 0.85 ADRB2 (0.36) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL5458703 0.84
SCHEMBL151806 0.84 ADRB2 (0.43) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL8805375 0.82 THRB (0.39) TSHRALDH1A1CA1CA2
SCHEMBL2922320 0.80 THRB (0.43) TSHRALDH1A1CA1CA2
SCHEMBL27090158 0.80 THRB (0.43) TSHRALDH1A1CA1CA2
SCHEMBL2761917 0.80 ADRB2 (0.36) ADRB2ADRB1ADRB3CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070178319-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. (JP) 2007-08-02 US disclosed
EP-1564269-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-17 EP disclosed
US-20040216641-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20040216641-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device H1-2, SMC2, H1-0 ADRB2 2840/4885ADRB1 4081/4885ADRB3 3573/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.