⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5465527 | 0.96 | — | — | |
| SCHEMBL2950154 | 0.90 | — | — | |
| SCHEMBL19499984 | 0.90 | — | — | |
| SCHEMBL2950549 | 0.87 | — | — | |
| SCHEMBL649382 | 0.86 | — | — | |
| SCHEMBL2960889 | 0.86 | — | — | |
| SCHEMBL12799182 | 0.82 | — | — | |
| SCHEMBL297861 | 0.81 | — | — | |
| SCHEMBL19499977 | 0.80 | — | — | |
| SCHEMBL19168534 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070178319-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| EP-1564269-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-17 | — | — | EP | disclosed |
| US-6930393-B2 | hydrolyzable silicon compound or at least one product resulting from at least partial hydrolysis condensation of the silicon compound | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2005-08-16 | — | — | US | disclosed |
| US-20040216641-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| US-20040195660-A1 | Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-10-07 | — | — | US | disclosed |