SCHEMBL547494

SCHEMBL547494

[N-]=[N+]=C(S(=O)(=O)c1ccc(Cl)cc1)S(=O)(=O)c1ccc(Cl)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.48
MAPK1 P28482 2/20 0.48
CYP3A4 P08684 1/20 0.48
CA1 P00915 4/20 0.45
CA2 P00918 4/20 0.45
MMP1 P03956 1/20 0.45
MMP2 P08253 1/20 0.45
MMP9 P14780 1/20 0.45
MMP8 P22894 1/20 0.45
MMP13 P45452 1/20 0.45
CA12 O43570 3/20 0.45
CA3 P07451 3/20 0.45
CA4 P22748 3/20 0.45
CA6 P23280 3/20 0.45
CA5A P35218 3/20 0.45
CA7 P43166 3/20 0.45
CA9 Q16790 3/20 0.45
CA13 Q8N1Q1 3/20 0.45
CA14 Q9ULX7 3/20 0.45
CA5B Q9Y2D0 3/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11973784 0.93 MAPT (0.44) ALDH1A1MAPK1CYP3A4CA1CA2
SCHEMBL14650732 0.91 MAPT (0.48) ALDH1A1MAPK1CYP3A4CA1CA2
SCHEMBL11973333 0.87 FLT1 (0.50) ALDH1A1CA1CA2MMP1MMP2
SCHEMBL11973535 0.87 HPGD (0.47) ALDH1A1MAPK1CA1CA2MMP1
SCHEMBL3170255 0.82 ALDH1A1 (0.39) ALDH1A1MAPK1CYP3A4CA1CA2
SCHEMBL8421461 0.82 MEN1 (0.39) ALDH1A1CYP3A4CA1CA2MMP1
SCHEMBL3167031 0.81 ALDH1A1 (0.41) ALDH1A1MAPK1CYP3A4CA1CA2
SCHEMBL4545348 0.81 MAPT (0.43) ALDH1A1KMT2ANPC1CES1MAPT
SCHEMBL9011982 0.80 APEX1 (0.42) ALDH1A1CA1CA2MMP2MMP9
SCHEMBL36092 0.79 GAA (0.48) ALDH1A1CYP3A4CA1CA2MMP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 493 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121873631-B Spin-on carbon composition, semiconductor preparation method and semiconductor device Jiageng Innovation Laboratory (CN) 2026-05-26 CN claimed
CN-122011922-A Bottom anti-reflection coating composition and preparation and application thereof 嘉庚创新实验室 2026-05-12 CN claimed
CN-115368494-B Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof 瑞红(苏州)电子化学品股份有限公司 2024-03-29 CN claimed
CN-115685678-A Star-shaped molecular glass film forming resin and photoresist and preparation method thereof 南通林格橡塑制品有限公司 2023-02-03 CN claimed
CN-115368494-A Hexafluoroisopropanol-containing monomer copolymer, preparation method thereof, chemical amplification type photoresist and application 瑞红(苏州)电子化学品股份有限公司 2022-11-22 CN claimed
CN-114779577-A Cyclodextrin inclusion compound molecular glass photoresist 南通林格橡塑制品有限公司 2022-07-22 CN claimed
CN-114442429-A Molecular glass photoresist of metallocene compound and preparation method thereof 南通林格橡塑制品有限公司 2022-05-06 CN claimed
CN-110256655-A A kind of tannic acid Quito official's epoxy resin and preparation method thereof and preparation can liquid alkali developing negative photoresist 苏州瑞红电子化学品有限公司 2019-09-20 CN claimed
CN-108084331-B A kind of biology base film-forming resin and its photoresist of preparation 江南大学 2019-08-16 CN claimed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
US-20040253547-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-12-16 US claimed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP claimed
US-6165677-A Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-12-26 US claimed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US claimed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP claimed
US-5338641-A Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-16 US claimed
CN-121873631-B Spin-on carbon composition, semiconductor preparation method and semiconductor device Jiageng Innovation Laboratory (CN) 2026-05-26 CN disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417557-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed