Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CXCR2 | P25025 | 2/20 | 0.40 |
| ▸ | CA2 | P00918 | 7/20 | 0.39 |
| ▸ | CA1 | P00915 | 6/20 | 0.39 |
| ▸ | CA9 | Q16790 | 6/20 | 0.39 |
| ▸ | CXCR1 | P25024 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.37 |
| ▸ | DRD2 | P14416 | 2/20 | 0.35 |
| ▸ | DRD4 | P21917 | 2/20 | 0.35 |
| ▸ | DRD3 | P35462 | 2/20 | 0.35 |
| ▸ | DRD1 | P21728 | 1/20 | 0.35 |
| ▸ | DRD5 | P21918 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | STS | P08842 | 1/20 | 0.35 |
| ▸ | KIF11 | P52732 | 1/20 | 0.35 |
| ▸ | HTR1A | P08908 | 1/20 | 0.35 |
| ▸ | HTR1D | P28221 | 1/20 | 0.35 |
| ▸ | HTR1B | P28222 | 1/20 | 0.35 |
| ▸ | ADORA2A | P29274 | 1/20 | 0.34 |
| ▸ | ADORA1 | P30542 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13418131 | 1.00 | CXCR2 (0.40) | CXCR2CA2CA1CA9CXCR1 | |
| SCHEMBL548275 | 0.87 | CXCR2 (0.39) | CXCR2CA2CA1CA9CXCR1 | |
| SCHEMBL3152157 | 0.86 | CA1 (0.47) | CXCR2CA2CA1CA9CXCR1 | |
| SCHEMBL548130 | 0.84 | PIK3CD (0.42) | CA2CA1CA9TDP1 | |
| SCHEMBL1802710 | 0.82 | CA2 (0.43) | CA2CA1CA9STS | |
| SCHEMBL30584645 | 0.82 | CA2 (0.43) | CA2CA1CA9TDP1KMT2A | |
| SCHEMBL780030 | 0.82 | CA1 (0.56) | CXCR2CA2CA1CA9CXCR1 | |
| SCHEMBL8821206 | 0.82 | CA1 (0.56) | CXCR2CA2CA1CA9CXCR1 | |
| SCHEMBL576035 | 0.82 | CA2 (0.50) | CXCR2CA2CA1CA9CXCR1 | |
| Trifluoromethanesulfonic Acid SCHEMBL5427818 | 0.81 | SOS1 (0.43) | CA2CA1CA9LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 205 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1111465-B1 | Negative radiation-sensitive resin composition | JSR CORP (JP) | 2010-02-17 | — | — | EP | claimed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | claimed |
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| WO-2025018305-A1 | METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT | JSR株式会社 | 2025-01-23 | — | — | WO | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-6818379-B2 | SULFONIUM SALT REPRESENTED BY THE FOLLOWING FORMULA (I): WHEREIN Q1, Q2 AND Q3 EACH INDEPENDENTLY REPRESENT HYDROGEN, HYDROXY, ALKYL HAVING 1 TO 6 CARBON ATOMS, OR ALKOXY HAVING 1 TO 6 CARBON ATOMS, BUT ALL OF Q1, Q2 AND Q3 ARE NOT THE SAME; | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-11-16 | — | — | US | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| EP-1443362-A2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-08-04 | — | — | EP | disclosed |
| US-20030148211-A1 | Sulfonium salt and use thereof | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-08-07 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| US-5679496-A | CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CXCR2 2756/4885CA2 3332/4885CA1 1120/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.