Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.36 |
| ▸ | CYP11B1 | P15538 | 3/20 | 0.36 |
| ▸ | CYP11B2 | P19099 | 3/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | CA2 | P00918 | 1/20 | 0.34 |
| ▸ | PGR | P06401 | 1/20 | 0.33 |
| ▸ | PDE10A | Q9Y233 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.31 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.31 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.30 |
| ▸ | KIF11 | P52732 | 2/20 | 0.30 |
| ▸ | TNKS | O95271 | 1/20 | 0.30 |
| ▸ | PARP1 | P09874 | 1/20 | 0.30 |
| ▸ | TNKS2 | Q9H2K2 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL547633 | 0.85 | ACE2 (0.33) | ACE2 | |
| SCHEMBL548252 | 0.83 | CA2 (0.46) | ACE2CYP11B1CYP11B2CYP3A4CYP2D6 | |
| SCHEMBL547999 | 0.78 | ACE2 (0.42) | ACE2CYP3A4TSHR | |
| SCHEMBL17914396 | 0.77 | CA2 (0.52) | ACE2CYP3A4CYP2C9CA2PGR | |
| SCHEMBL547842 | 0.77 | CYP2C19 (0.40) | CYP11B1CYP11B2CYP3A4CYP2D6CYP2C9 | |
| SCHEMBL547748 | 0.76 | PTPRC (0.46) | CYP11B1CYP11B2CYP3A4CYP2D6CYP19A1 | |
| SCHEMBL547654 | 0.74 | MEN1 (0.41) | ACE2CYP3A4CYP2D6CYP2C9CA2 | |
| SCHEMBL18288153 | 0.73 | ACE2 (0.40) | ACE2CYP2C9CA2KIF11 | |
| SCHEMBL548125 | 0.73 | NR1I2 (0.34) | — | |
| SCHEMBL548354 | 0.72 | PTPRC (0.33) | ACE2CYP11B1CYP11B2CYP3A4CYP2D6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-20 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-7871751-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-7323284-B2 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | ACE2 4757/4885CYP11B1 4474/4885CYP11B2 4585/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | ACE2 4318/4885CYP11B1 4256/4885CYP11B2 4316/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ACE2 4407/4885CYP11B1 4256/4885CYP11B2 4361/4885 |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | TERB1, C5, TERT | ACE2 4035/4885CYP11B1 4881/4885CYP11B2 4878/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | ACE2 1493/4885CYP11B1 4012/4885CYP11B2 4285/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | ACE2 4858/4885CYP11B1 311/4885CYP11B2 886/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ACE2 4407/4885CYP11B1 4256/4885CYP11B2 4361/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | ACE2 1620/4885CYP11B1 788/4885CYP11B2 780/4885 |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | WEE1, SLC11A2, RAD1 | ACE2 4880/4885CYP11B1 127/4885CYP11B2 513/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.