Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 1/20 | 0.46 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.39 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | KIF11 | P52732 | 1/20 | 0.38 |
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 3/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | PGR | P06401 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.35 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.32 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17914396 | 0.93 | CA2 (0.52) | CA2GABRA1GABRB2ALDH1A1TSHR | |
| SCHEMBL547654 | 0.89 | MEN1 (0.41) | CA2ALDH1A1TSHRTDP1KIF11 | |
| SCHEMBL29380144 | 0.85 | ALDH1A1 (0.44) | CA2ALDH1A1TSHRTDP1MEN1 | |
| SCHEMBL547819 | 0.85 | ALDH1A1 (0.44) | CA2ALDH1A1TSHRTDP1MEN1 | |
| SCHEMBL547817 | 0.83 | ACE2 (0.36) | CA2GABRA1GABRB2TSHRKIF11 | |
| SCHEMBL18802803 | 0.80 | CA2 (0.39) | CA2GABRA1GABRB2ALDH1A1TSHR | |
| SCHEMBL12602812 | 0.80 | CA2 (0.39) | CA2GABRA1GABRB2ALDH1A1TSHR | |
| SCHEMBL3581251 | 0.80 | CA2 (0.32) | CA2MEN1KMT2AMAPT | |
| SCHEMBL18910954 | 0.80 | ACE2 (0.38) | CA2GABRA1GABRB2ACE2PGR | |
| SCHEMBL3116704 | 0.80 | CA2 (0.32) | CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 104 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-20 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-7005216-B2 | Photo mask | RENESAS TECHNOLOGY CORP. (JP) | 2006-02-28 | — | — | US | disclosed |
| US-6790564-B2 | FOR USE IN PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES; EFFICIENCY | RENESAS TECHNOLOGY CORPORATION (JP) | 2004-09-14 | — | — | US | disclosed |
| US-6660191-B1 | Prepared from corresponding 1,5-diethenylnaphthalene derivatives, and are well suited for the improved anionic polymerization of diene, vinylaromatic and/or (meth)acrylic monomers. | ELF ATOCHEM S.A. (FR) | 2003-12-09 | — | — | US | disclosed |
| US-20030129505-A1 | Krypton fluoride laser lithography; photoresist pattern | RENESAS ELECTRONICS CORPORATION (JP) | 2003-07-10 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-20020086222-A1 | Photomask and manufacturing method of an electronic device therewith | RENESAS ELECTRONICS CORPORATION (JP) | 2002-07-04 | — | — | US | disclosed |
| EP-0673954-B1 | Difunctional initiators for anionic polymerisation derived from 1,5-diethenylnaphtalene and polymerisation process in which they are used | ATOCHEM ELF SA (FR) | 1999-04-28 | — | — | EP | disclosed |
| US-5744558-A | 1,5-diethenylnaphthalene compounds and bifunctional primers for anionic polymerization prepared therefrom | ELF ATOCHEM S.A. (FR) | 1998-04-28 | — | — | US | disclosed |
| EP-0673954-A1 | Difunctional initiators for anionic polymerisation derived from 1,5-diethenylnaphtalene and polymerisation process in which they are used | ELF ATOCHEM S.A. (FR) | 1995-09-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CA2 3332/4885GABRA1 3202/4885GABRB2 4213/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | CA2 1077/4885GABRA1 2942/4885GABRB2 3316/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA2 1466/4885GABRA1 3110/4885GABRB2 3518/4885 |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | TERB1, C5, TERT | CA2 3182/4885GABRA1 3542/4885GABRB2 4224/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA2 1466/4885GABRA1 3110/4885GABRB2 3518/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | CA2 1212/4885GABRA1 1819/4885GABRB2 3123/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.