Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 5/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 5/20 | 0.43 |
| ▸ | RECQL | P46063 | 1/20 | 0.43 |
| ▸ | GPR84 | Q9NQS5 | 9/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.42 |
| ▸ | HPGD | P15428 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | MPI | P34949 | 1/20 | 0.39 |
| ▸ | ALOX5 | P09917 | 1/20 | 0.38 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.38 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.36 |
| ▸ | ENPP1 | P22413 | 1/20 | 0.35 |
| ▸ | HSD17B1 | P14061 | 1/20 | 0.34 |
| ▸ | HSD17B2 | P37059 | 1/20 | 0.34 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.34 |
| ▸ | ADORA2A | P29274 | 1/20 | 0.34 |
| ▸ | ADORA1 | P30542 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | CYP11B1 | P15538 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Perflubutane SCHEMBL6029410 | 0.90 | MEN1 (0.41) | MEN1KMT2ARECQLGPR84KDM4E | |
| SCHEMBL3680645 | 0.88 | MEN1 (0.38) | MEN1KMT2ARECQLGPR84KDM4E | |
| SCHEMBL1041514 | 0.84 | MEN1 (0.47) | MEN1KMT2ARECQLGPR84KDM4E | |
| SCHEMBL6063712 | 0.80 | GPR84 (0.45) | MEN1KMT2ARECQLGPR84KDM4E | |
| Trifluoromethanesulfonic Acid SCHEMBL28266656 | 0.76 | DNMT1 (0.41) | MEN1KMT2AGPR84KDM4EHPGD | |
| SCHEMBL8902918 | 0.74 | CYP2D6 (0.51) | MEN1KMT2ARECQLGPR84KDM4E | |
| Trifluoromethanesulfonic Acid SCHEMBL27873665 | 0.73 | PTPN1 (0.43) | GPR84ALOX5PTPN1HSD17B1HSD17B2 | |
| Trifluoromethanesulfonic Acid SCHEMBL29049220 | 0.73 | PTPN1 (0.47) | HPGDALDH1A1PTPN1PTGS2ENPP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL28025897 | 0.73 | CA12 (0.45) | MEN1KMT2AKDM4EHPGDALDH1A1 | |
| Biphenyl SCHEMBL27775705 | 0.73 | PTPN1 (0.45) | MEN1KMT2ARECQLKDM4EHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| EP-1830228-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070059632-A1 | Method of manufacturing a semiconductor device | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2007-03-15 | — | — | US | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| EP-1666970-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-06-07 | — | — | EP | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| EP-1443362-A2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-08-04 | — | — | EP | disclosed |
| US-4358559-A | CURABLE TO TACK-FREE ELASTOMERIC ARTICLES | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1982-11-09 | — | — | US | disclosed |
| US-4343861-A | Fluoroelastomer/polyepichlorohydrin elastomer articles | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1982-08-10 | — | — | US | disclosed |
| US-4293663-A | SHAPING, CURING | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1981-10-06 | — | — | US | disclosed |
| US-4287322-A | POLYPHENOL CURING AGENT | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1981-09-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | MEN1 3872/4885KMT2A 2377/4885RECQL 3131/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | MEN1 1260/4885KMT2A 2526/4885RECQL 1670/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | MEN1 3286/4885KMT2A 1321/4885RECQL 980/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | MEN1 1512/4885KMT2A 633/4885RECQL 323/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.