SCHEMBL547992

SCHEMBL547992

CC(C)(O)c1ccc(Oc2ccccc2)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 6/20 0.52
TSHR P16473 1/20 0.52
NR1H2 P55055 1/20 0.52
BAX Q07812 1/20 0.52
CA1 P00915 1/20 0.47
CA2 P00918 1/20 0.47
MAOA P21397 1/20 0.46
PDK1 Q15118 1/20 0.46
PDK2 Q15119 1/20 0.46
PDK3 Q15120 1/20 0.46
PDK4 Q16654 1/20 0.46
NPC1 O15118 3/20 0.46
RAB9A P51151 3/20 0.46
ALDH1A1 P00352 2/20 0.46
L3MBTL1 Q9Y468 2/20 0.46
MEN1 O00255 1/20 0.46
LMNA P02545 1/20 0.46
KMT2A Q03164 1/20 0.46
HPGD P15428 2/20 0.45
MAPT P10636 2/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547582 0.91 RAB9A (0.52) LTA4HTSHRNR1H2BAXNPC1
SCHEMBL548388 0.84 NPC1 (0.47) NR1H2NPC1RAB9AALDH1A1MEN1
Diphenylether SCHEMBL27727076 0.84 LTA4H (0.67) LTA4HTSHRNR1H2BAXCA1
SCHEMBL548698 0.83 LTA4H (0.48) LTA4HTSHRNR1H2BAXCA1
SCHEMBL18383085 0.83 LTA4H (0.56) LTA4HCA1CA2NPC1RAB9A
SCHEMBL8045052 0.83 TEAD4 (0.50) TSHRNPC1RAB9AALDH1A1MEN1
SCHEMBL10038560 0.82 LTA4H (0.57) LTA4HTSHRNR1H2BAXCA1
SCHEMBL19392583 0.82 RAB9A (0.65) LTA4HTSHRNR1H2BAXCA1
SCHEMBL799841 0.82 RAB9A (0.65) LTA4HTSHRNR1H2BAXCA1
SCHEMBL2463038 0.82 LTA4H (0.57) LTA4HTSHRNR1H2BAXCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116354801-A Synthesis method for pyriproxyfen intermediate 如东众意化工有限公司 2023-06-30 CN claimed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
CN-116354801-A Synthesis method for pyriproxyfen intermediate 如东众意化工有限公司 2023-06-30 CN disclosed
CN-116354801-A Synthesis method for pyriproxyfen intermediate 如东众意化工有限公司 2023-06-30 CN disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-20230021574-A1 METHOD FOR PRODUCING ISOCYANATE ASAHI KASEI KABUSHIKI KAISHA (JP) 2023-01-26 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
WO-2021100131-A1 METHOD FOR PRODUCING ISOCYANATE 旭化成株式会社 2021-05-27 WO disclosed
EP-3141957-B1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-24 EP disclosed
EP-3279728-B1 RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-17 EP disclosed
US-7871751-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-01-18 US disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 US disclosed
EP-2080750-A1 RADIATION-SENSITIVE COMPOSITION Mitsubishi Gas Chemical Company, Inc. (JP) 2009-07-22 EP disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 US disclosed
US-7323284-B2 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2008-01-29 US disclosed
EP-1739485-A1 RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2007-01-03 EP disclosed
US-20030022095-A1 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2003-01-30 US disclosed
US-5032667-A Heat resistant, waterproof AMOCO CORPORATION (US) 1991-07-16 US disclosed
US-4925916-A FROM DIAMINES OR TETRACARBOXY ACIDS CONTAINING AROMATIC RINGS BRIDGED BY ISOALKYLIDENE GROUPS AMOCO CORPORATION (US) 1990-05-15 US disclosed
US-4713438-A Amide and/or imide containing polymers and monomers for the preparation thereof AMOCO CORPORATION (US) 1987-12-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 LTA4H 186/4885TSHR 2912/4885NR1H2 670/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R LTA4H 355/4885TSHR 1292/4885NR1H2 264/4885
US-20230021574-A1 METHOD FOR PRODUCING ISOCYANATE CPS1, IDH3A, ALKBH3 LTA4H 1793/4885TSHR 4433/4885NR1H2 4211/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 LTA4H 3432/4885TSHR 3709/4885NR1H2 1335/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R LTA4H 355/4885TSHR 1292/4885NR1H2 264/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.