Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 2/20 | 0.56 |
| ▸ | ESR1 | P03372 | 4/20 | 0.44 |
| ▸ | ESR2 | Q92731 | 3/20 | 0.44 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.44 |
| ▸ | AR | P10275 | 3/20 | 0.44 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.44 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.44 |
| ▸ | TSHR | P16473 | 2/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.44 |
| ▸ | HTR6 | P50406 | 1/20 | 0.44 |
| ▸ | ESRRG | P62508 | 1/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | RORC | P51449 | 1/20 | 0.43 |
| ▸ | PDE2A | O00408 | 1/20 | 0.41 |
| ▸ | PGR | P06401 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.38 |
| ▸ | HIF1A | Q16665 | 3/20 | 0.38 |
| ▸ | HTT | P42858 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6055239 | 0.87 | LMNA (0.56) | LMNACYP3A4SLC6A2SLC6A3TSHR | |
| SCHEMBL1607138 | 0.83 | LMNA (0.75) | LMNAESR1ESR2CYP3A4AR | |
| SCHEMBL18290852 | 0.83 | LMNA (0.52) | LMNAESR1CYP3A4ARSLC6A2 | |
| SCHEMBL4417480 | 0.83 | CYP3A4 (0.44) | LMNAESR1ESR2CYP3A4AR | |
| SCHEMBL17681908 | 0.82 | HTT (0.50) | LMNAARTSHRHPGDHSD17B10 | |
| SCHEMBL8908718 | 0.81 | LMNA (0.54) | LMNAESR1CYP3A4ARSLC6A2 | |
| SCHEMBL10073359 | 0.81 | PDE2A (0.56) | LMNAPDE2A | |
| SCHEMBL15387995 | 0.81 | PDE2A (0.56) | LMNAPDE2A | |
| SCHEMBL478137 | 0.81 | PDE2A (0.56) | LMNAPDE2A | |
| SCHEMBL30133823 | 0.79 | LMNA (0.47) | LMNAESR1ESR2CYP3A4AR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-20 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| US-20020016410-A1 | THERMOPLASTIC RESIN COMPOSITION | KATAYAMA MASHIRO (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6316579-B1 | MOLDABILITY, USEFUL FOR PRODUCING A MOLDED ARTICLE HAVING A GOOD EXTERNAL APPEARANCE AND IMPACT RESISTANCE | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2001-11-13 | — | — | US | disclosed |
| US-6197873-B1 | AROMATIC POLYCARBONATE, AROMATIC POLYESTER, EPOXIDIZED CONJUGATED DIENE-VINYLAROMATIC BLOCK POLYMER THAT MAY BE HYDROGENATED, REACTION ACCELERATOR FOR EPOXY GROUPS | DAICEL CHEMICAL INDUSTRY, LTD. (JP) | 2001-03-06 | — | — | US | disclosed |
| US-6111016-A | CONSISTS OF A POLYCARBONATE RESIN CONTAINING TERMINAL HYDROXY GROUP OF 1 TO 40% RELATIVE TO WHOLE TERMINALS AND A VINYL AROMATIC-DIENE CONTAINING COPOLYMER MODIFIED BY EPOXIDATION; DIMENSIONAL STABILITY, HEAT RESISTANCE, IMPACT STRENGTH | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2000-08-29 | — | — | US | disclosed |
| US-6066686-A | POLYCARBONATE BLENDED WTIH RUBBER MODIFIED POLYSTYRENE CONTAINING 15 TO 25% BY WEIGHT OF RUBBER COMPONENT WITH SPECIFIC PARTICLE SIZE AND 15 TO 70% GEL CONTENT, AND AN EPOXIDIZED CO POLYMER OF VINYL AROMATIC AND CONJUGATE DIENE | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2000-05-23 | — | — | US | disclosed |
| EP-0945491-A2 | Resin composition and molded products | DAICEL CHEMICAL INDUSTRIES, Ltd. (JP) | 1999-09-29 | — | — | EP | disclosed |
| EP-0865450-B1 | PROCESS FOR THE REMOVAL OF RESIDUAL SOLVENTS AND RESIDUAL MONOMERS FROM POWDERED POLYMERISATES | BASF AG (DE) | 1999-08-18 | — | — | EP | disclosed |
| EP-0893476-A1 | Thermoplastic resin composition | Daicel Chemical Industries, Ltd. (JP) | 1999-01-27 | — | — | EP | disclosed |
| EP-0878506-A2 | Polycarbonate composition | Daicel Chemical Industries, Ltd. (JP) | 1998-11-18 | — | — | EP | disclosed |
| EP-0816433-A2 | Thermoplastic polycarbonate composition | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 1998-01-07 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | LMNA 772/4885ESR1 3319/4885ESR2 3628/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | LMNA 736/4885ESR1 404/4885ESR2 596/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | LMNA 723/4885ESR1 446/4885ESR2 699/4885 |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | TERB1, C5, TERT | LMNA 912/4885ESR1 2504/4885ESR2 2530/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | LMNA 723/4885ESR1 446/4885ESR2 699/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | LMNA 3102/4885ESR1 711/4885ESR2 949/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.