SCHEMBL548574

SCHEMBL548574

O=S(=O)([O-])c1ccc(F)cc1F.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 4/20 0.38
HTR2C P28335 3/20 0.38
KCNH2 Q12809 2/20 0.38
KMT2A Q03164 2/20 0.38
ALDH1A1 P00352 2/20 0.38
AKR1B1 P15121 1/20 0.37
KCNN4 O15554 1/20 0.35
POLB P06746 1/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.35
CCR2 P41597 2/20 0.34
PKM P14618 1/20 0.34
PKLR P30613 1/20 0.34
MAPT P10636 1/20 0.34
AVPR2 P30518 1/20 0.34
GPR27 Q9NS67 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.33
MEN1 O00255 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30113133 1.00 HTR2A (0.38) HTR2AHTR2CKCNH2KMT2AALDH1A1
Toliodium SCHEMBL5403487 0.84 MAPT (0.38) KMT2AALDH1A1AKR1B1POLBCCR2
SCHEMBL5407038 0.83 KAT6A (0.38) HTR2AHTR2CKMT2AALDH1A1AKR1B1
SCHEMBL16341204 0.82 AKR1B1 (0.45) HTR2AHTR2CKCNH2ALDH1A1AKR1B1
Potassium Ion SCHEMBL16341238 0.82 AKR1B1 (0.45) KCNH2ALDH1A1AKR1B1POLBCCR2
Silver SCHEMBL6115455 0.82 AKR1B1 (0.45) HTR2AHTR2CKCNH2ALDH1A1AKR1B1
SCHEMBL30827110 0.82 GAA (0.40) KMT2AALDH1A1AKR1B1MAPK1CCR2
SCHEMBL503803 0.82 GAA (0.40) KMT2AALDH1A1AKR1B1MAPK1CCR2
SCHEMBL5403652 0.81 PSEN1 (0.36) ALDH1A1AKR1B1TSHRCCR2MAPT
SCHEMBL5406919 0.81 GAA (0.39) HTR2AHTR2CKCNH2ALDH1A1AKR1B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 190 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024014330-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2024-01-18 WO disclosed
WO-2024014329-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2024-01-18 WO disclosed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-20230096312-A1 RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-03-30 US disclosed
WO-2023008355-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION 三菱瓦斯化学株式会社 2023-02-02 WO disclosed
WO-2023008354-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2023-02-02 WO disclosed
CN-115151863-A Resist composition and method of using the same 三菱瓦斯化学株式会社 2022-10-04 CN disclosed
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-22 US disclosed
CN-108137478-B Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method 三菱瓦斯化学株式会社 2021-09-28 CN disclosed
CN-107924123-B Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same 学校法人关西大学 2021-08-06 CN disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030022095-A1 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2003-01-30 US disclosed
US-6506537-B2 Photopolymerization JSR CORPORATION (JP) 2003-01-14 US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
US-6280900-B1 RADIATION SENSITIVE COMPOSITION WITH ALKALINE DEVELOPER SOLUBLE IN POLYMER COATED ON SUBSTRATE JSR CORPORATION (JP) 2001-08-28 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 HTR2A 4818/4885HTR2C 4798/4885KCNH2 2235/4885
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it RDX, SLC11A2, FBL HTR2A 3860/4885HTR2C 4141/4885KCNH2 3502/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.