SCHEMBL5527151

SCHEMBL5527151

COCc1cc(C(C)(C)C)cc(COC)c1OC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.38
GABRB2 P47870 1/20 0.38
CYP2C19 P33261 2/20 0.37
TDP1 Q9NUW8 3/20 0.34
ALDH1A1 P00352 3/20 0.34
PRKCE Q02156 2/20 0.34
MYLK Q15746 2/20 0.34
MAPT P10636 2/20 0.34
MEN1 O00255 1/20 0.34
PRKCG P05129 1/20 0.34
PRKCA P17252 1/20 0.34
APEX1 P27695 1/20 0.34
RECQL P46063 1/20 0.34
KMT2A Q03164 1/20 0.34
CYP2D6 P10635 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2C9 P11712 1/20 0.33
HIF1A Q16665 1/20 0.33
ELANE P08246 1/20 0.32
CD69 Q07108 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25767416 0.88 GABRA1 (0.34) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL11365064 0.88 GABRA1 (0.38) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL25446784 0.81 SHBG (0.40) TDP1ALDH1A1PRKCEMYLKMAPT
SCHEMBL12353847 0.81 GABRA1 (0.39) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL14999487 0.81 PTGS2 (0.39) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL25446807 0.80 PRKCE (0.41) CYP2C19TDP1ALDH1A1PRKCEMYLK
SCHEMBL913881 0.79 GABRA1 (0.38) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL16673552 0.79 GABRA1 (0.38) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL914375 0.79 CYP2C19 (0.40) GABRA1GABRB2CYP2C19TDP1ALDH1A1
SCHEMBL2114143 0.79 CYP2C19 (0.55) GABRA1GABRB2CYP2C19TDP1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230350305-A1 MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND TREATMENT LIQUID FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230213858-A1 MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2023-07-06 US disclosed
US-20230143007-A1 MULTILAYER OBJECT AND RELEASE AGENT COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-05-11 US disclosed
WO-2014010392-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANKS INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-01-16 WO disclosed
WO-2013141376-A1 PROTECTANT, METHOD FOR PRODUCING COMPOUND PROTECTED BY PROTECTANT, RESIN PROTECTED BY PROTECTANT, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING RESIN PROTECTED BY PROTECTANT, PATTERN-FORMING MATERIAL, PHOTOSENSITIVE FILM, CURED RELIEF PATTERN, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 (JP) 2013-09-26 WO disclosed
WO-2013018524-A1 PHOTOSENSITIVE RESIN COMPOSITION, MATERIAL FOR FORMING RELIEF PATTERN, PHOTOSENSITIVE FILM, POLYIMIDE FILM, CURED RELIEF PATTERN AND METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 (JP) 2013-02-07 WO disclosed
US-8173349-B2 Photosensitive resin composition, polymer compound, method of forming a pattern, and electronic device FUJIFILM CORPORATION (JP) 2012-05-08 US disclosed
US-8173349-B2 Photosensitive resin composition, polymer compound, method of forming a pattern, and electronic device FUJIFILM CORPORATION (JP) 2012-05-08 US disclosed
US-20100080963-A1 PHOTOSENSITIVE RESIN COMPOSITION, POLYMER COMPOUND, METHOD OF FORMING A PATTERN, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2010-04-01 US disclosed
US-20100080963-A1 PHOTOSENSITIVE RESIN COMPOSITION, POLYMER COMPOUND, METHOD OF FORMING A PATTERN, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2010-04-01 US disclosed
US-7615324-B2 Photosensitive composition, and cured relief pattern production method and semiconductor device using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7615324-B2 Photosensitive composition, and cured relief pattern production method and semiconductor device using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7598009-B2 Photosensitive resin composition, production method for cured relief pattern using it, and semiconductor device FUJIFILM CORPORATION (JP) 2009-10-06 US disclosed
US-7598009-B2 Photosensitive resin composition, production method for cured relief pattern using it, and semiconductor device FUJIFILM CORPORATION (JP) 2009-10-06 US disclosed
US-20090035693-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR CURED RELIEF PATTERN USING IT, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20090035693-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR CURED RELIEF PATTERN USING IT, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20080227024-A1 PHOTOSENSITIVE COMPOSITION, AND CURED RELIEF PATTERN PRODUCTION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-20080227024-A1 PHOTOSENSITIVE COMPOSITION, AND CURED RELIEF PATTERN PRODUCTION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed