Propionic Acid

Propionic Acid

SCHEMBL5570489

CCC(=O)[O-].CCCCCC[N+](C)(CCCCCC)CCCCCC

nearest known ligand 0.50

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Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 1/20 0.50
LSS P48449 1/20 0.48
DNM1 Q05193 7/20 0.46
HTT P42858 1/20 0.46
CES2 O00748 3/20 0.44
CES1 P23141 3/20 0.44
SLC22A1 O15245 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propionic Acid SCHEMBL5575042 1.00 BBOX1 (0.50) BBOX1LSSDNM1HTTCES2
Propionic Acid SCHEMBL5570474 1.00 BBOX1 (0.50) BBOX1LSSDNM1HTTCES2
Propionic Acid SCHEMBL5571651 0.98 BBOX1 (0.52) BBOX1LSSDNM1HTTCES2
Propionic Acid SCHEMBL28649679 0.92 DNM1 (0.52) BBOX1LSSDNM1HTT
Propionic Acid SCHEMBL2898271 0.92 DNM1 (0.52) BBOX1LSSDNM1HTT
Bicarbonate SCHEMBL3268124 0.91 LSS (0.52) BBOX1LSSDNM1HTTCES2
Bicarbonate SCHEMBL28426177 0.91 LSS (0.52) BBOX1LSSDNM1HTTCES2
Bicarbonate SCHEMBL829819 0.91 LSS (0.52) BBOX1LSSDNM1HTTCES2
Tributylmethylammonium SCHEMBL5570476 0.91 BBOX1 (0.54) BBOX1DNM1CES2CES1SLC22A1
Bicarbonate SCHEMBL28711949 0.91 LSS (0.52) BBOX1LSSDNM1HTTCES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed