Formic Acid

Formic Acid

SCHEMBL5570521

CCCCCCC[N+](C)(CCCCCCC)CCCCCCC.O=CO

nearest known ligand 0.52

Full drug profile on Sugi Atlas →

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 12/20 0.52
HTT P42858 2/20 0.50
SLC22A1 O15245 1/20 0.48
LSS P48449 1/20 0.46
KMT2A Q03164 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Formic Acid SCHEMBL15732741 1.00 DNM1 (0.52) DNM1HTTSLC22A1LSSKMT2A
Formic Acid SCHEMBL5574352 1.00 DNM1 (0.52) DNM1HTTSLC22A1LSSKMT2A
Formic Acid SCHEMBL5346402 1.00 DNM1 (0.52) DNM1HTTSLC22A1LSSKMT2A
Formic Acid SCHEMBL5574272 0.98 DNM1 (0.48) DNM1HTTSLC22A1LSSKMT2A
Tributylmethylammonium SCHEMBL557488 0.90 SLC22A1 (0.41) DNM1HTTSLC22A1
Formic Acid SCHEMBL5574345 0.86 LSS (0.52) DNM1HTTSLC22A1LSSKMT2A
Formic Acid SCHEMBL5570529 0.86 DNM1 (0.71) DNM1HTTSLC22A1KMT2A
Formic Acid SCHEMBL2533294 0.86 DNM1 (0.71) DNM1HTTSLC22A1KMT2A
Formic Acid SCHEMBL5570517 0.86 LSS (0.52) DNM1HTTSLC22A1LSSKMT2A
Formic Acid SCHEMBL558269 0.86 DNM1 (0.71) DNM1HTTSLC22A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed