SCHEMBL5570569

SCHEMBL5570569

CC(C)C(=O)O.CCCCCCCC(C)C(C)(C)N

nearest known ligand 0.49

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
GRIK1 P39086 2/20 0.49
GRIK2 Q13002 2/20 0.49
ACE2 Q9BYF1 1/20 0.49
GPR84 Q9NQS5 7/20 0.48
FFAR1 O14842 1/20 0.48
MAPT P10636 1/20 0.47
LCK P06239 1/20 0.47
PPARD Q03181 1/20 0.47
ZDHHC20 Q5W0Z9 1/20 0.47
ZDHHC2 Q9UIJ5 1/20 0.47
SLC1A2 P43004 1/20 0.46
SLC1A1 P43005 1/20 0.46
CA2 P00918 2/20 0.42
HSPD1 P10809 1/20 0.41
BLM P54132 1/20 0.41
HSPE1 P61604 1/20 0.41
MAPK1 P28482 1/20 0.41
FFAR4 Q5NUL3 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5571697 1.00 GRIK1 (0.49) GRIK1GRIK2ACE2GPR84FFAR1
SCHEMBL5574318 1.00 GRIK1 (0.49) GRIK1GRIK2ACE2GPR84FFAR1
SCHEMBL5570514 0.98 GRIK1 (0.47) GRIK1GRIK2ACE2GPR84FFAR1
Bicarbonate SCHEMBL26929177 0.93 GRIK1 (0.47) GRIK1GRIK2ACE2GPR84FFAR1
SCHEMBL5574338 0.93 CA2 (0.48) GRIK1GRIK2ACE2GPR84FFAR1
Bicarbonate SCHEMBL6737994 0.93 GRIK1 (0.47) GRIK1GRIK2ACE2GPR84FFAR1
Lactic Acid SCHEMBL5574307 0.91 GPR84 (0.52) GRIK1GRIK2ACE2GPR84FFAR1
Lactic Acid SCHEMBL5573515 0.91 GPR84 (0.52) GRIK1GRIK2ACE2GPR84FFAR1
Lactic Acid SCHEMBL5570557 0.91 GPR84 (0.52) GRIK1GRIK2ACE2GPR84FFAR1
Acetic Acid SCHEMBL5574248 0.91 GRIK1 (0.46) GRIK1GRIK2ACE2GPR84FFAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed