SCHEMBL5574338

SCHEMBL5574338

CC(C)C(=O)O.CCCCC(C)C(C)(C)N

nearest known ligand 0.48

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CA2 P00918 6/20 0.48
MAPK1 P28482 1/20 0.48
SLC1A2 P43004 2/20 0.46
SLC1A1 P43005 2/20 0.46
SLC1A3 P43003 1/20 0.46
CA1 P00915 4/20 0.42
GRIK1 P39086 2/20 0.41
GRIK2 Q13002 2/20 0.41
ACE2 Q9BYF1 1/20 0.39
GPR84 Q9NQS5 3/20 0.38
FFAR1 O14842 1/20 0.38
MAPT P10636 1/20 0.37
LCK P06239 1/20 0.37
PPARD Q03181 1/20 0.37
ZDHHC20 Q5W0Z9 1/20 0.37
ZDHHC2 Q9UIJ5 1/20 0.37
SLC15A1 P46059 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5570514 0.94 GRIK1 (0.47) CA2MAPK1SLC1A2SLC1A1SLC1A3
SCHEMBL5574318 0.93 GRIK1 (0.49) CA2MAPK1SLC1A2SLC1A1GRIK1
SCHEMBL5570569 0.93 GRIK1 (0.49) CA2MAPK1SLC1A2SLC1A1GRIK1
SCHEMBL5571697 0.93 GRIK1 (0.49) CA2MAPK1SLC1A2SLC1A1GRIK1
Lactic Acid SCHEMBL5570485 0.91 CA2 (0.47) CA2MAPK1SLC1A2SLC1A1SLC1A3
Acetic Acid SCHEMBL5574282 0.90 CA2 (0.45) CA2MAPK1SLC1A2SLC1A1SLC1A3
Propionic Acid SCHEMBL5574450 0.89 CA2 (0.44) CA2MAPK1SLC1A2SLC1A1SLC1A3
Pivalate SCHEMBL5573309 0.89 CA2 (0.44) CA2MAPK1SLC1A2SLC1A1SLC1A3
SCHEMBL5574369 0.88 CHRM1 (0.43) CA2MAPK1SLC1A2SLC1A1SLC1A3
SCHEMBL142680 0.85 OPRM1 (0.40) CA2MAPK1SLC1A2SLC1A1SLC1A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed