Tributylmethylammonium

Tributylmethylammonium

SCHEMBL5571629

CCCCC(=O)[O-].CCCC[N+](C)(CCCC)CCCC

nearest known ligand 0.67

Full drug profile on Sugi Atlas →

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 5/20 0.67
CA1 P00915 1/20 0.67
FFAR3 O14843 2/20 0.48
HDAC3 O15379 2/20 0.48
HDAC1 Q13547 2/20 0.48
HDAC2 Q92769 2/20 0.48
HDAC8 Q9BY41 2/20 0.48
CES2 O00748 1/20 0.48
CES1 P23141 1/20 0.48
FABP3 P05413 5/20 0.47
NFKB1 P19838 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tributylmethylammonium SCHEMBL28636529 0.94 BBOX1 (0.64) BBOX1CA1CES2CES1FABP3
Tributylmethylammonium SCHEMBL5573597 0.94 BBOX1 (0.64) BBOX1CA1CES2CES1FABP3
Tributylmethylammonium SCHEMBL28636543 0.94 BBOX1 (0.64) BBOX1CA1CES2CES1FABP3
Valeric Acid SCHEMBL5570495 0.94 BBOX1 (0.64) BBOX1CA1FFAR3HDAC3HDAC1
Tributylmethylammonium SCHEMBL5574972 0.92 BBOX1 (0.62) BBOX1CA1CES2CES1FABP3
Tributylmethylammonium SCHEMBL5573569 0.92 BBOX1 (0.62) BBOX1CA1CES2CES1FABP3
Valeric Acid SCHEMBL5575016 0.92 BBOX1 (0.62) BBOX1CA1CES2CES1FABP3
Valeric Acid SCHEMBL5574372 0.92 BBOX1 (0.62) BBOX1CA1CES2CES1FABP3
Valeric Acid SCHEMBL5573605 0.92 BBOX1 (0.62) BBOX1CA1CES2CES1FABP3
Valeric Acid SCHEMBL5574439 0.92 BBOX1 (0.62) BBOX1CA1CES2CES1FABP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed