Pivalate

Pivalate

SCHEMBL5571701

CC(C)(C)C(=O)[O-].CCCCCCC[N+](C)(CCCCCCC)CCCCCCC

nearest known ligand 0.48

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Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.48
DNM1 Q05193 12/20 0.46
LSS P48449 1/20 0.45
KMT2A Q03164 1/20 0.45
HSP90AA1 P07900 1/20 0.43
RAD52 P43351 1/20 0.43
BBOX1 O75936 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pivalate SCHEMBL5571679 1.00 HTT (0.48) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5570486 1.00 HTT (0.48) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5574158 1.00 HTT (0.48) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5575010 0.98 HTT (0.44) HTTDNM1LSSKMT2AHSP90AA1
Tributylmethylammonium SCHEMBL4924819 0.92 BBOX1 (0.45) HTTDNM1KMT2ABBOX1
Pivalate SCHEMBL5575058 0.88 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5573304 0.88 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5570533 0.88 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5574421 0.88 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5571654 0.88 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed