Pivalate

Pivalate

SCHEMBL5575010

CC(C)(C)C(=O)[O-].CCCCC[N+](C)(CCCCC)CCCCC

nearest known ligand 0.44

Full drug profile on Sugi Atlas →

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.44
BBOX1 O75936 2/20 0.44
DNM1 Q05193 10/20 0.43
LSS P48449 1/20 0.41
KMT2A Q03164 1/20 0.41
HSP90AA1 P07900 1/20 0.40
RAD52 P43351 1/20 0.40
CES2 O00748 1/20 0.39
CES1 P23141 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pivalate SCHEMBL5571701 0.98 HTT (0.48) HTTBBOX1DNM1LSSKMT2A
Pivalate SCHEMBL5570486 0.98 HTT (0.48) HTTBBOX1DNM1LSSKMT2A
Pivalate SCHEMBL5571679 0.98 HTT (0.48) HTTBBOX1DNM1LSSKMT2A
Pivalate SCHEMBL5574158 0.98 HTT (0.48) HTTBBOX1DNM1LSSKMT2A
Tributylmethylammonium SCHEMBL4924819 0.94 BBOX1 (0.45) HTTBBOX1DNM1KMT2ACES2
Pivalate SCHEMBL5574379 0.88 DNM1 (0.56) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5575058 0.86 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5570533 0.86 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5573304 0.86 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1
Pivalate SCHEMBL5574421 0.86 DNM1 (0.60) HTTDNM1LSSKMT2AHSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed