Pivalate

Pivalate

SCHEMBL5573309

CC(C)(C)C(=O)O.CCCCC(C)C(C)(C)N

nearest known ligand 0.44

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Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA2 P00918 7/20 0.44
MAPK1 P28482 1/20 0.44
CA1 P00915 4/20 0.42
SLC1A2 P43004 2/20 0.42
SLC1A1 P43005 2/20 0.42
SLC1A3 P43003 1/20 0.42
GRIK1 P39086 2/20 0.37
GRIK2 Q13002 2/20 0.37
SLC15A1 P46059 1/20 0.37
CTSK P43235 1/20 0.36
ACE2 Q9BYF1 1/20 0.35
GPR84 Q9NQS5 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pivalate SCHEMBL5575062 0.94 GRIK1 (0.43) CA2CA1SLC1A2SLC1A1GRIK1
Pivalate SCHEMBL5571656 0.93 GRIK1 (0.45) CA2CA1SLC1A2SLC1A1GRIK1
Pivalate SCHEMBL5574426 0.93 GRIK1 (0.45) CA2CA1SLC1A2SLC1A1GRIK1
Pivalate SCHEMBL5570539 0.93 GRIK1 (0.45) CA2CA1SLC1A2SLC1A1GRIK1
Acetic Acid SCHEMBL5574282 0.90 CA2 (0.45) CA2MAPK1CA1SLC1A2SLC1A1
Propionic Acid SCHEMBL5574450 0.89 CA2 (0.44) CA2MAPK1CA1SLC1A2SLC1A1
SCHEMBL5574338 0.89 CA2 (0.48) CA2MAPK1CA1SLC1A2SLC1A1
Pivalate SCHEMBL5574389 0.88 CHRM1 (0.38) CA2MAPK1CA1SLC1A2SLC1A1
Lactic Acid SCHEMBL5570485 0.87 CA2 (0.47) CA2MAPK1CA1SLC1A2SLC1A1
SCHEMBL142680 0.85 OPRM1 (0.40) CA2MAPK1CA1SLC1A2SLC1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed