Tributylmethylammonium

Tributylmethylammonium

SCHEMBL5573568

CCCC(=O)[O-].CCCC[N+](C)(CCCC)CCCC

nearest known ligand 0.61

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Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 2/20 0.61
HDAC3 O15379 2/20 0.61
HDAC1 Q13547 2/20 0.61
HDAC2 Q92769 2/20 0.61
HDAC8 Q9BY41 2/20 0.61
BBOX1 O75936 5/20 0.61
CA1 P00915 1/20 0.54
NFKB1 P19838 1/20 0.46
GPR84 Q9NQS5 1/20 0.44
FABP3 P05413 4/20 0.42
CA2 P00918 1/20 0.42
CES2 O00748 1/20 0.42
CES1 P23141 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyric Acid SCHEMBL5571481 0.94 BBOX1 (0.59) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5574409 0.92 BBOX1 (0.57) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5570465 0.92 BBOX1 (0.57) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5574326 0.92 BBOX1 (0.57) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5575024 0.92 BBOX1 (0.57) FFAR3HDAC3HDAC1HDAC2HDAC8
Tributylmethylammonium SCHEMBL5571629 0.91 BBOX1 (0.67) FFAR3HDAC3HDAC1HDAC2HDAC8
Tributylmethylammonium SCHEMBL5573597 0.89 BBOX1 (0.64) BBOX1CA1NFKB1FABP3CES2
Tributylmethylammonium SCHEMBL28636543 0.89 BBOX1 (0.64) BBOX1CA1FABP3CES2CES1
Tributylmethylammonium SCHEMBL28636529 0.89 BBOX1 (0.64) BBOX1CA1FABP3CES2CES1
Tributylmethylammonium SCHEMBL5573569 0.88 BBOX1 (0.62) BBOX1CA1NFKB1FABP3CES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed