Butyric Acid

Butyric Acid

SCHEMBL5574341

CCCC(=O)[O-].CCC[N+](C)(C)C

nearest known ligand 0.67

Full drug profile on Sugi Atlas →

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 2/20 0.67
HDAC3 O15379 2/20 0.67
HDAC1 Q13547 2/20 0.67
HDAC2 Q92769 2/20 0.67
HDAC8 Q9BY41 2/20 0.67
BBOX1 O75936 10/20 0.52
CA1 P00915 1/20 0.46
CES2 O00748 1/20 0.43
CES1 P23141 1/20 0.43
NFKB1 P19838 1/20 0.39
ACHE P22303 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Choline SCHEMBL147729 0.86 FFAR3 (0.61) FFAR3HDAC3HDAC1HDAC2HDAC8
Valeric Acid SCHEMBL5574480 0.86 CA1 (0.67) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5574234 0.86 FFAR3 (0.61) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5573636 0.86 FFAR3 (0.67) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5571477 0.85 FFAR3 (0.74) FFAR3HDAC3HDAC1HDAC2HDAC8
Propionic Acid SCHEMBL5573582 0.85 BBOX1 (0.45) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL109152 0.85 FFAR3 (0.82) FFAR3HDAC3HDAC1HDAC2HDAC8
Bicarbonate SCHEMBL1896982 0.85 BBOX1 (0.43) FFAR3HDAC3HDAC1HDAC2HDAC8
Hexanoate SCHEMBL5571756 0.85 CA1 (0.58) BBOX1CA1CES2CES1NFKB1
Butyric Acid SCHEMBL5573611 0.85 FFAR3 (0.58) FFAR3HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed