SCHEMBL5574362

SCHEMBL5574362

CC(C)C(=O)[O-].CCC[N+](C)(C)C

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.41
TSHR P16473 2/20 0.41
NFKB1 P19838 2/20 0.41
NPSR1 Q6W5P4 2/20 0.41
CA1 P00915 2/20 0.40
BBOX1 O75936 5/20 0.38
SLC22A16 Q86VW1 1/20 0.37
FFAR3 O14843 2/20 0.35
HDAC3 O15379 2/20 0.35
HDAC1 Q13547 2/20 0.35
HDAC2 Q92769 2/20 0.35
HDAC8 Q9BY41 2/20 0.35
ACHE P22303 1/20 0.34
CPT2 P23786 1/20 0.34
CPT1A P50416 1/20 0.34
CA2 P00918 1/20 0.34
ADRA2A P08913 1/20 0.33
ADRA1A P35348 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
L-Lactic Acid SCHEMBL4956025 0.88 SLC22A16 (0.40) CYP3A4TSHRNFKB1NPSR1CA1
SCHEMBL5575064 0.86 CA1 (0.47) CYP3A4TSHRNFKB1NPSR1CA1
SCHEMBL5575052 0.86 CYP3A4 (0.41) CYP3A4TSHRNFKB1NPSR1CA1
Bicarbonate SCHEMBL1896982 0.85 BBOX1 (0.43) BBOX1FFAR3HDAC3HDAC1HDAC2
SCHEMBL5574363 0.85 DNM1 (0.56) TSHRNFKB1CA1ACHECA2
Tetrapropylammonium SCHEMBL5575007 0.83 SLC22A1 (0.50) CYP3A4TSHRNFKB1NPSR1CA1
SCHEMBL5574332 0.83 DNM1 (0.60) TSHRNFKB1NPSR1CA1ACHE
SCHEMBL5574311 0.83 DNM1 (0.60) TSHRNFKB1NPSR1CA1ACHE
SCHEMBL5570507 0.83 DNM1 (0.60) TSHRNFKB1NPSR1CA1ACHE
SCHEMBL5571694 0.83 DNM1 (0.60) TSHRNFKB1NPSR1CA1ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed