Tetrapropylammonium

Tetrapropylammonium

SCHEMBL5575007

CC(C)C(=O)[O-].CCC[N+](CCC)(CCC)CCC

nearest known ligand 0.50

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Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 1/20 0.50
CA1 P00915 2/20 0.46
CYP3A4 P08684 2/20 0.42
TSHR P16473 2/20 0.42
NFKB1 P19838 2/20 0.42
NPSR1 Q6W5P4 2/20 0.42
CA2 P00918 2/20 0.39
BBOX1 O75936 2/20 0.39
FFAR3 O14843 2/20 0.36
HDAC3 O15379 2/20 0.36
HDAC1 Q13547 2/20 0.36
HDAC2 Q92769 2/20 0.36
HDAC8 Q9BY41 2/20 0.36
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrapropylammonium SCHEMBL5574321 0.88 SLC22A1 (0.48) SLC22A1CA1CYP3A4TSHRNFKB1
Tetrapropylammonium SCHEMBL107039 0.88 SLC22A1 (0.48) SLC22A1CA1CYP3A4TSHRNFKB1
Tetrabuthylammonium SCHEMBL1691312 0.86 SLC22A1 (0.55) SLC22A1CA1CYP3A4TSHRCA2
Tetrapropylammonium SCHEMBL108342 0.84 SLC22A1 (0.62) SLC22A1BBOX1FFAR3HDAC3HDAC1
SCHEMBL5574362 0.83 CYP3A4 (0.41) CA1CYP3A4TSHRNFKB1NPSR1
Tetrapropylammonium SCHEMBL5874097 0.83 SLC22A1 (0.48) SLC22A1CA1CYP3A4TSHRNFKB1
Tetrapropylammonium SCHEMBL106498 0.83 SLC22A1 (0.48) SLC22A1CA1CYP3A4TSHRNFKB1
SCHEMBL5575052 0.83 CYP3A4 (0.41) CA1CYP3A4TSHRNFKB1NPSR1
Tetrapropylammonium SCHEMBL107041 0.82 SLC22A1 (0.42) SLC22A1CA1CYP3A4TSHRNFKB1
Tetrapropylammonium SCHEMBL108600 0.81 SLC22A1 (0.59) SLC22A1BBOX1FFAR3HDAC3HDAC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed