SCHEMBL5574880

SCHEMBL5574880

O=C(S)c1ccccc1C#Cc1[c]cccc1

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
CA12 O43570 1/20 0.34
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
CA3 P07451 1/20 0.34
CA4 P22748 1/20 0.34
CA6 P23280 1/20 0.34
CA5A P35218 1/20 0.34
CA7 P43166 1/20 0.34
CA9 Q16790 1/20 0.34
CA13 Q8N1Q1 1/20 0.34
CA14 Q9ULX7 1/20 0.34
CA5B Q9Y2D0 1/20 0.34
FFAR1 O14842 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21858922 0.71 ALDH1A1 (0.33)
SCHEMBL5403604 0.70 ALDH1A1 (0.47) NPC1RAB9ACA12CA1CA2
SCHEMBL6535731 0.70 KCNH2 (0.33)
SCHEMBL4262000 0.70 TSHR (0.42) FFAR1
SCHEMBL21858113 0.68 GRM5 (0.42) FFAR1
SCHEMBL21858053 0.68 CHAT (0.49) CA1CA2
SCHEMBL9404648 0.67 CA1 (0.44) CA12CA1CA2CA3CA4
SCHEMBL27836394 0.67 GRM5 (0.44) CA12CA1CA2CA4CA7
SCHEMBL2291999 0.67
SCHEMBL21858077 0.66 CDC14B (0.36) NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7283372-B2 Circuit element having a first layer of an electrically insulating substrate material and method for manufacturing a circuit element INFINEON TECHNOLOGIES AG (DE) 2007-10-16 US disclosed
US-20050017759-A1 Circuit element having a first layer of an electrically insulating substrate material and method for manufacturing a circuit element INFINEON TECHNOLOGIES AG (DE) 2005-01-27 US disclosed
EP-1482574-A2 Switching element comprising a dielectric layer and its method of manufacturing Infineon Technologies AG (DE) 2004-12-01 EP disclosed