SCHEMBL5575477

SCHEMBL5575477

[c]1ccc(-c2ccc(-c3cc[c]s3)s2)s1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10470838 0.85 HSD17B1 (0.46)
SCHEMBL5541506 0.84 SNCA (0.37)
SCHEMBL18741079 0.84 NPC1 (0.38)
SCHEMBL18741007 0.76 CYP1A2 (0.33)
SCHEMBL18740974 0.73
SCHEMBL18741093 0.72 MAPT (0.33)
SCHEMBL3602297 0.69 ADORA2A (0.34)
SCHEMBL8801081 0.69
SCHEMBL385688 0.69 ALDH1A1 (0.38)
SCHEMBL3606482 0.67 DYRK1A (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7276395-B2 Acene-thiophene semiconductors 3M INNOVATIVE PROPERTIES COMPANY (US) 2007-10-02 US disclosed
EP-1654248-A1 ACENE-THIOPHENE SEMICONDUCTORS 3M Innovative Properties Company (US) 2006-05-10 EP disclosed
US-20060033086-A1 Depositing a gate electrode material on the substrate;depositing a gate dielectric on the gate electrode material;depositing an organic semiconductor layer comprising acene-thiophene compounds, providing a source electrode and a drain electrode contiguous to the organic semiconductor layer GERLACH CHRISTOPHER P 2006-02-16 US disclosed
US-6998068-B2 Acene-thiophene semiconductors 3M INNOVATIVE PROPERTIES COMPANY (US) 2006-02-14 US disclosed
WO-2005019198-A1 ACENE-THIOPHENE SEMICONDUCTORS 3M INNOVATIVE PROPERTIES COMPANY (US) 2005-03-03 WO disclosed
US-20050035333-A1 Acene-thiophene semiconductors 3M INNOVATIVE PROPERTIES COMPANY 2005-02-17 US disclosed