Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 4/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | THRB | P10828 | 1/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.30 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4642191 | 0.84 | TSHR (0.41) | TSHRALDH1A1THRB | |
| SCHEMBL29011788 | 0.82 | TSHR (0.39) | TSHRALDH1A1THRB | |
| Potassium Ion SCHEMBL18140961 | 0.79 | TSHR (0.37) | TSHRALDH1A1THRB | |
| SCHEMBL18139376 | 0.79 | TSHR (0.37) | TSHRALDH1A1THRB | |
| SCHEMBL18139389 | 0.79 | TSHR (0.37) | TSHRALDH1A1THRB | |
| SCHEMBL18141232 | 0.79 | CA2 (0.39) | TSHRALDH1A1THRB | |
| Lithium Ion SCHEMBL18139793 | 0.79 | TSHR (0.37) | TSHRALDH1A1THRB | |
| SCHEMBL3987348 | 0.78 | TSHR (0.39) | TSHRALDH1A1THRB | |
| SCHEMBL10243291 | 0.77 | ALDH1A1 (0.46) | TSHRALDH1A1THRB | |
| SCHEMBL27847755 | 0.77 | TSHR (0.38) | TSHRALDH1A1THRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7238615-B2 | Formation method for metal element, production method for semiconductor device, production method for electronic device, semiconductor device, electronic device, and electronic equipment | SEIKO EPSON CORPORATION (JP) | 2007-07-03 | — | — | US | disclosed |
| US-20040203235-A1 | Formation method for metal element, production method for semiconductor device, production method for electronic device, semiconductor device, electronic device, and electronic equipment | SEIKO EPSON CORPORATION (JP) | 2004-10-14 | — | — | US | disclosed |