SCHEMBL563065

SCHEMBL563065

Cc1ccccc1[S+](C)C.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA2 P00918 17/20 0.35
CA1 P00915 16/20 0.35
MMP1 P03956 2/20 0.33
MMP2 P08253 2/20 0.33
MMP9 P14780 2/20 0.33
MMP8 P22894 2/20 0.33
MMP13 P45452 2/20 0.33
HSD11B1 P28845 1/20 0.33
KCNH2 Q12809 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31290709 0.85 CA1 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL2634639 0.85 CA1 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL31290710 0.85 CA1 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL3134833 0.85 CA1 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL3122212 0.84 CYP1A2 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL548554 0.83 CA1 (0.32) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL562052 0.83 GPR3 (0.43) HSD11B1KCNH2
SCHEMBL3114542 0.82 CA1 (0.33) CA2CA1MMP1MMP2MMP9
SCHEMBL3120425 0.82 CYP1A2 (0.34) CA2CA1
SCHEMBL3114236 0.81 CA1 (0.32) CA2CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
US-8609013-B2 Method of fabricating a microfabricated structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-12-17 US disclosed
US-8580484-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-11-12 US disclosed
EP-1942375-B1 Inkjet printer head comprising photosensitive polymer complex containing silver nanoparticles and method of preparing the photosensitive polymer complex SAMSUNG ELECTRONICS CO LTD (KR) 2013-02-27 EP disclosed
US-8383317-B2 Surface treatment of interpenetrating polymer networkcarbon tubes; photolithography; modifying surfaces of carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups; heat curing; negative patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-02-26 US disclosed
US-8211957-B2 Negative pattern of carbon nanotubes and carbon nanotube composite comprising surface-modified carbon nanotubes SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-07-03 US disclosed
US-20120034735-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns LEE SANG KYUN (KR) 2012-02-09 US disclosed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US disclosed
US-7875416-B2 Composition for forming photosensitive polymer complex and method of preparing photosensitive polymer complex containing silver nanoparticles using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-01-25 US disclosed
US-20100323298-A1 Photosensitive composition, microfabrication method using the same, and microfabricated structure thereof PARK JONG JIN 2010-12-23 US disclosed
US-20030004289-A1 Acetal group containing norbornene copolymer for photoresist, method for producing the same and photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. 2003-01-02 US disclosed
US-20020015906-A1 Polymer for photoresist, method of production thereof and photoresist composition containing polymer SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-02-07 US disclosed
EP-0789279-B1 Polymer and resist material WAKO PURE CHEM IND LTD (JP) 2001-03-21 EP disclosed
US-6033826-A POLYHYDROXYSTYRENE DERIVATIVE CONTAINING AN ACETAL OR KETAL GROUP WHICH CAN EASILY BE ELIMINATED IN THE PRESENCE OF AN ACID IN THE MOLECULE AND HAVING A VERY NARROW MOLECULAR WEIGHT DISTRIBUTION GIVES A RESIST MATERIAL WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-07 US disclosed
EP-0704762-B1 Resist material and pattern formation WAKO PURE CHEM IND LTD (JP) 1999-12-15 EP disclosed
EP-0789279-A1 Polymer and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-08-13 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed