Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL562052

Cc1ccccc1[S+](C)C.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.43

Full drug profile on Sugi Atlas →

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 2/20 0.43
KCNH2 Q12809 8/20 0.40
HSD11B1 P28845 1/20 0.36
ACHE P22303 5/20 0.35
PTGS1 P23219 1/20 0.35
PTGS2 P35354 1/20 0.35
TSHR P16473 1/20 0.33
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL7647508 0.84 GPR3 (0.42) GPR3KCNH2HSD11B1ACHEPTGS1
SCHEMBL563065 0.83 CA2 (0.35) KCNH2HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL2110845 0.81 GPR3 (0.40) GPR3KCNH2HSD11B1ACHEPTGS1
Trifluoromethanesulfonic Acid SCHEMBL645278 0.80 CYP1A2 (0.41) GPR3KCNH2ACHE
Trifluoromethanesulfonic Acid SCHEMBL31168285 0.78 GPR3 (0.40) GPR3KCNH2ACHE
Trifluoromethanesulfonic Acid SCHEMBL645454 0.78 GPR3 (0.40) GPR3KCNH2ACHE
SCHEMBL562392 0.77 GAA (0.41) ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL8853674 0.76 KCNH2 (0.38) GPR3KCNH2ACHEALDH1A1
Hydrochloric Acid SCHEMBL11620242 0.76 TSHR (0.47) ACHETSHRALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL36457 0.76 GPR3 (0.47) GPR3KCNH2HSD11B1ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114591128-B Direct cross-coupling method of aryl sulfide salt and aryl bromide 南京工业大学 2023-08-22 CN claimed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
CN-114591128-B Direct cross-coupling method of aryl sulfide salt and aryl bromide 南京工业大学 2023-08-22 CN disclosed
US-8609013-B2 Method of fabricating a microfabricated structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-12-17 US disclosed
US-8580484-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-11-12 US disclosed
EP-1942375-B1 Inkjet printer head comprising photosensitive polymer complex containing silver nanoparticles and method of preparing the photosensitive polymer complex SAMSUNG ELECTRONICS CO LTD (KR) 2013-02-27 EP disclosed
US-20120034735-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns LEE SANG KYUN (KR) 2012-02-09 US disclosed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US disclosed
US-7875416-B2 Composition for forming photosensitive polymer complex and method of preparing photosensitive polymer complex containing silver nanoparticles using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-01-25 US disclosed
US-20100323298-A1 Photosensitive composition, microfabrication method using the same, and microfabricated structure thereof PARK JONG JIN 2010-12-23 US disclosed
US-20030004289-A1 Acetal group containing norbornene copolymer for photoresist, method for producing the same and photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. 2003-01-02 US disclosed
US-20020015906-A1 Polymer for photoresist, method of production thereof and photoresist composition containing polymer SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-02-07 US disclosed
EP-0789279-B1 Polymer and resist material WAKO PURE CHEM IND LTD (JP) 2001-03-21 EP disclosed
US-6033826-A POLYHYDROXYSTYRENE DERIVATIVE CONTAINING AN ACETAL OR KETAL GROUP WHICH CAN EASILY BE ELIMINATED IN THE PRESENCE OF AN ACID IN THE MOLECULE AND HAVING A VERY NARROW MOLECULAR WEIGHT DISTRIBUTION GIVES A RESIST MATERIAL WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-07 US disclosed
EP-0704762-B1 Resist material and pattern formation WAKO PURE CHEM IND LTD (JP) 1999-12-15 EP disclosed
EP-0789279-A1 Polymer and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-08-13 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed