⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27731172 | 0.71 | SLC6A3 (0.31) | — | |
| SCHEMBL6858086 | 0.67 | — | — | |
| SCHEMBL27465096 | 0.67 | — | — | |
| SCHEMBL3537331 | 0.67 | — | — | |
| SCHEMBL21995884 | 0.67 | SLC6A3 (0.33) | — | |
| SCHEMBL482468 | 0.67 | — | — | |
| SCHEMBL21086749 | 0.67 | — | — | |
| SCHEMBL21332245 | 0.67 | — | — | |
| SCHEMBL9186090 | 0.67 | — | — | |
| SCHEMBL11342488 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024116576-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID-GENERATING AGENT | JSR株式会社 | 2024-06-06 | — | — | WO | disclosed |
| WO-2024116577-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR | JSR株式会社 | 2024-06-06 | — | — | WO | disclosed |
| WO-2024116575-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND RADIATION-SENSITIVE ACID GENERATOR | JSR株式会社 | 2024-06-06 | — | — | WO | disclosed |
| US-20240126167-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2024-04-18 | — | — | US | disclosed |
| WO-2024057751-A1 | RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2024-03-21 | — | — | WO | disclosed |
| WO-2024038865-A1 | COMPOUND, COMPOSITION, SURFACE TREATMENT AGENT, COATING LIQUID, ARTICLE, AND ARTICLE MANUFACTURING METHOD | ＡＧＣ株式会社 | 2024-02-22 | — | — | WO | disclosed |
| WO-2024038866-A1 | COMPOUND, COMPOSITION, SURFACE TREATMENT AGENT, COATING LIQUID, ARTICLE, AND METHOD FOR PRODUCING ARTICLE | ＡＧＣ株式会社 | 2024-02-22 | — | — | WO | disclosed |
| US-20240004297-A1 | COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2024-01-04 | — | — | US | disclosed |
| US-20230400768-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20140302438-A1 | RESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, AND RESIST SOLVENT | JSR CORPORATION (JP) | 2014-10-09 | — | — | US | disclosed |
| US-20140186771-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, COMPOUND, AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2014-07-03 | — | — | US | disclosed |
| US-20140004463-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2014-01-02 | — | — | US | disclosed |
| US-8609318-B2 | Radiation-sensitive resin composition, method for forming resist pattern and polymer | JSR CORPORATION (JP) | 2013-12-17 | — | — | US | disclosed |
| US-20130143160-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130122426-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20130022912-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120034560-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER | JSR CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20090061360-A1 | MATERIAL FOR RESIST PROTECTIVE FILM FOR IMMERSION LITHOGRAPHY | ASAHI GLASS COMPANY, LIMITED (JP) | 2009-03-05 | — | — | US | disclosed |
| EP-2009499-A1 | MATERIAL OF THE RESIST-PROTECTING MEMBRANE FOR IMMERSION LITHOGRAPHY | Asahi Glass Company, Limited (JP) | 2008-12-31 | — | — | EP | disclosed |