SCHEMBL563758

SCHEMBL563758

O=C(O)C(=Cc1cccc2ccccc12)C(F)F

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.51
ALDH1A1 P00352 3/20 0.50
MAPT P10636 2/20 0.50
HPGD P15428 2/20 0.50
MEN1 O00255 2/20 0.50
GAA P10253 2/20 0.50
KMT2A Q03164 2/20 0.50
CRHBP P24387 1/20 0.50
HTT P42858 1/20 0.50
CRHR2 Q13324 1/20 0.50
HDAC8 Q9BY41 1/20 0.43
HDAC6 Q9UBN7 1/20 0.43
MTNR1A P48039 1/20 0.42
MTNR1B P49286 1/20 0.42
SMPD2 O60906 2/20 0.42
NR4A1 P22736 1/20 0.41
NR4A2 P43354 1/20 0.41
NR4A3 Q92570 1/20 0.41
F2 P00734 1/20 0.40
LMNA P02545 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL563247 0.83 KDM4E (0.48) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL28492926 0.78 KDM4E (0.55) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL7189395 0.78 KDM4E (0.71) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL6524361 0.76 KDM4E (0.47) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL6516609 0.75 KDM4E (0.49) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL36974 0.75 KDM4E (0.68) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL7436213 0.75 KDM4E (0.55) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL819646 0.75 KDM4E (0.68) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL7436220 0.75 KDM4E (0.55) KDM4EALDH1A1MAPTHPGDMEN1
SCHEMBL563351 0.74 KDM4E (0.51) KDM4EALDH1A1MAPTHPGDMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8609318-B2 Radiation-sensitive resin composition, method for forming resist pattern and polymer JSR CORPORATION (JP) 2013-12-17 US disclosed
US-20120034560-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER JSR CORPORATION (JP) 2012-02-09 US disclosed