Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR1 | O14842 | 2/20 | 0.60 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.50 |
| ▸ | NPC1 | O15118 | 3/20 | 0.50 |
| ▸ | MAPT | P10636 | 3/20 | 0.50 |
| ▸ | MEN1 | O00255 | 3/20 | 0.50 |
| ▸ | CYP1A2 | P05177 | 3/20 | 0.50 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.50 |
| ▸ | CYP2C9 | P11712 | 3/20 | 0.50 |
| ▸ | HPGD | P15428 | 3/20 | 0.50 |
| ▸ | CYP2C19 | P33261 | 3/20 | 0.50 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.50 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.50 |
| ▸ | APP | P05067 | 1/20 | 0.50 |
| ▸ | PTGDR2 | Q9Y5Y4 | 1/20 | 0.43 |
| ▸ | RAB9A | P51151 | 2/20 | 0.43 |
| ▸ | CA12 | O43570 | 1/20 | 0.43 |
| ▸ | CA2 | P00918 | 1/20 | 0.43 |
| ▸ | CA9 | Q16790 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28577354 | 0.85 | FFAR1 (0.48) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL27970953 | 0.85 | FFAR1 (0.55) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL17431598 | 0.82 | FFAR1 (0.52) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL5250347 | 0.81 | FFAR1 (0.46) | FFAR1ALDH1A1MAPTMEN1CYP1A2 | |
| SCHEMBL563737 | 0.79 | NPC1 (0.50) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL31095607 | 0.78 | MAPT (0.50) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL5495682 | 0.78 | MAPT (0.50) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL5501538 | 0.78 | MAPT (0.50) | FFAR1ALDH1A1NPC1MAPTMEN1 | |
| SCHEMBL10300119 | 0.78 | FFAR1 (0.49) | FFAR1ALDH1A1CYP1A2PTGDR2HAO1 | |
| SCHEMBL30270429 | 0.78 | CYP3A4 (0.53) | FFAR1ALDH1A1NPC1MAPTMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 180 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3223328-B1 | ORGANIC PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF | KOLON INC (KR) | 2020-07-29 | — | — | EP | claimed |
| EP-3223328-A1 | ORGANIC PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF | Kolon Industries, Inc. (KR) | 2017-09-27 | — | — | EP | claimed |
| WO-2013100284-A1 | METHOD FOR MANUFACTURING ORGANIC SOLAR CELL AND THE ORGANIC SOLAR CELL MANUFACTURING BY USING THE SAME | KOLON INDUSTRIES, INC. (KR) | 2013-07-04 | — | — | WO | claimed |
| US-8216686-B2 | Conjugated dendron having no heteroatoms is coupled to the triphenylamine core; organic memory device includes an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer; may be used as a nonvolatile memory | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-07-10 | — | — | US | claimed |
| US-8124238-B2 | Redox system ; dendrimer is connected to core by linker group | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-02-28 | — | — | US | claimed |
| US-8044387-B1 | Semiconductor device built on plastic substrate | SPANSION LLC (US) | 2011-10-25 | — | — | US | claimed |
| US-8012673-B1 | Processing a copolymer to form a polymer memory cell | SPANSION LLC (US) | 2011-09-06 | — | — | US | claimed |
| US-7902086-B2 | Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell | SPANSION LLC (US) | 2011-03-08 | — | — | US | claimed |
| US-7635859-B2 | Memory device including dendrimer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-12-22 | — | — | US | claimed |
| US-7632706-B2 | System and method for processing an organic memory cell | SPANSION LLC (US) | 2009-12-15 | — | — | US | claimed |
| EP-1679720-A2 | Memory device including dendrimer | Samsung Electronics Co., Ltd (KR) | 2006-07-12 | — | — | EP | claimed |
| US-7026702-B2 | Memory device | ADVANCED MICRO DEVICES, INC. (US) | 2006-04-11 | — | — | US | claimed |
| WO-2005104188-A2 | POLYMER DIELECTRICS FOR MEMORY ELEMENT ARRAY INTERCONNECT | ADVANCED MICRO DEVICES, INC. (US) | 2005-11-03 | — | — | WO | claimed |
| US-20050224922-A1 | Polymer dielectrics for memory element array interconnect | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-10-13 | — | — | US | claimed |
| US-6893895-B1 | CuS formation by anodic sulfide passivation of copper surface | ADVANCED MICRO DEVICES, INC. (US) | 2005-05-17 | — | — | US | claimed |
| US-20040159835-A1 | Memory device | CYPRESS SEMICONDUCTOR CORPORATION | 2004-08-19 | — | — | US | claimed |
| US-6768157-B2 | Memory device | ADVANCED MICRO DEVICES, INC. | 2004-07-27 | — | — | US | claimed |
| US-20040026729-A9 | Memory device | COATUE CORPORATION | 2004-02-12 | — | — | US | claimed |
| US-20030178667-A1 | Memory device | CYPRESS SEMICONDUCTOR CORPORATION | 2003-09-25 | — | — | US | claimed |
| US-20030155602-A1 | Memory device | COATUE CORPORATION | 2003-08-21 | — | — | US | claimed |