Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSD | P07339 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2230540 | 0.73 | CTSD (0.43) | CTSD | |
| SCHEMBL27413856 | 0.67 | CTSD (0.35) | CTSD | |
| Hydrochloric Acid SCHEMBL7869576 | 0.67 | CTSD (0.35) | CTSD | |
| SCHEMBL28961651 | 0.65 | CTSD (0.38) | CTSD | |
| Hydrochloric Acid SCHEMBL9299341 | 0.65 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL810309 | 0.65 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL22660514 | 0.65 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL20567259 | 0.65 | CTSD (0.39) | CTSD | |
| Hydrochloric Acid SCHEMBL1539601 | 0.65 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL9576657 | 0.65 | CTSD (0.33) | CTSD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120035056-A1 | Nb-DOPED PEROVSKITE FLUX PINNING OF REBCO BASED SUPERCONDUCTORS BY MOCVD | U.S. DEPARTMENT OF ENERGY | 2012-02-09 | — | — | US | claimed |
| US-20120035056-A1 | Nb-DOPED PEROVSKITE FLUX PINNING OF REBCO BASED SUPERCONDUCTORS BY MOCVD | U.S. DEPARTMENT OF ENERGY | 2012-02-09 | — | — | US | disclosed |
| US-6348376-B2 | FIRST FLOWING A METAL SOURCE INTO A DEPOSITION CHAMBER HAVING SEMICONDUCTOR SUBSTRATE, STOPPING FLOW OF METAL, PURGING, STOPPING PURGE GAS AND FLOWING NITROGEN SOURCE GAS, PURGING; STEP COVERAGE, LOW IMPURITY CONCENTRATION AND LOW RESISTIVITY | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-02-19 | — | — | US | disclosed |
| US-20010034097-A1 | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-10-25 | — | — | US | disclosed |
| US-6197683-B1 | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-03-06 | — | — | US | disclosed |