SCHEMBL5862368

SCHEMBL5862368

CC(C)c1c([N+](=O)[O-])c(C(C)C)c(S(=O)(=O)O)c(C(C)C)c1[N+](=O)[O-]

nearest known ligand 0.36

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
FABP3 P05413 1/20 0.36
FABP4 P15090 1/20 0.36
FABP5 Q01469 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12569528 0.91 FABP3 (0.33) FABP3FABP4FABP5
SCHEMBL9004845 0.81 ALDH1A1 (0.39)
SCHEMBL178363 0.80 FABP3 (0.49) FABP3FABP4FABP5
SCHEMBL5388305 0.80 FABP3 (0.49) FABP3FABP4FABP5
SCHEMBL5376952 0.79 FABP3 (0.47) FABP3FABP4FABP5
SCHEMBL10087749 0.77 TDP1 (0.38)
SCHEMBL12548643 0.73 TDP1 (0.38)
SCHEMBL29083018 0.72 NSD2 (0.38)
SCHEMBL14883084 0.70 FABP3 (0.43) FABP3FABP4FABP5
SCHEMBL7821939 0.69 TDP1 (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8927194-B2 Chemical amplified photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-01-06 US disclosed
US-8927194-B2 Chemical amplified photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-01-06 US disclosed
US-20130177851-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-07-11 US disclosed
US-20130101940-A1 CHEMICAL AMPLIFIED PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-04-25 US disclosed
US-20130101940-A1 CHEMICAL AMPLIFIED PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-04-25 US disclosed
US-8343708-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2013-01-01 US disclosed
US-20120034564-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-8034537-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2011-10-11 US disclosed
US-7972763-B2 Patterns having high resolution; used for semiconductor microfabrication employing a lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-05 US disclosed
US-20100112477-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-05-06 US disclosed
US-20080248421-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080241746-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080153036-A1 Chemically amplified positive resist compostion SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-06-26 US disclosed
US-7220532-B2 Chemical amplification type resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-22 US disclosed
US-7220532-B2 Chemical amplification type resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-22 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed
US-7175963-B2 Chemical amplification type positive resist composition and a resin therefor SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-13 US disclosed
US-7135268-B2 Using aromatic sulfonate compound SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-11-14 US disclosed
US-20040029037-A1 Amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-02-12 US disclosed