SCHEMBL5875417

SCHEMBL5875417

O=C(CCCCCCCCC(=O)O[n+]1ccccc1)O[n+]1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.35
TSHR P16473 2/20 0.35
NFKB1 P19838 1/20 0.35
PMP22 Q01453 1/20 0.35
L3MBTL1 Q9Y468 2/20 0.34
MAPT P10636 2/20 0.34
TDP1 Q9NUW8 2/20 0.34
PAM P19021 2/20 0.34
DGKA P23743 1/20 0.33
PRSS1 P07477 1/20 0.33
PRSS2 P07478 1/20 0.33
PRSS3 P35030 1/20 0.33
RXFP1 Q9HBX9 1/20 0.31
HDAC3 O15379 1/20 0.31
HDAC4 P56524 1/20 0.31
HDAC1 Q13547 1/20 0.31
HDAC7 Q8WUI4 1/20 0.31
HDAC2 Q92769 1/20 0.31
HDAC10 Q969S8 1/20 0.31
HDAC11 Q96DB2 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5875252 0.98 TSHR (0.32) LMNATSHRNFKB1PMP22L3MBTL1
SCHEMBL5875270 0.93 TSHR (0.37) TSHR
SCHEMBL5227646 0.92 L3MBTL1 (0.34) LMNATSHRNFKB1PMP22L3MBTL1
SCHEMBL5875224 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM
SCHEMBL10556965 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM
SCHEMBL5874710 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM
SCHEMBL5875398 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM
SCHEMBL11063539 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM
SCHEMBL5874365 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM
SCHEMBL5874583 0.91 PAM (0.49) LMNATSHRMAPTTDP1PAM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed