⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL597804 | 0.87 | — | — | |
| SCHEMBL1792061 | 0.82 | — | — | |
| SCHEMBL29363000 | 0.82 | — | — | |
| SCHEMBL31435088 | 0.82 | — | — | |
| SCHEMBL5671250 | 0.82 | — | — | |
| SCHEMBL226462 | 0.82 | — | — | |
| SCHEMBL29358840 | 0.82 | — | — | |
| SCHEMBL8832642 | 0.67 | — | — | |
| SCHEMBL717415 | 0.67 | — | — | |
| SCHEMBL5457408 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114684776-B | MEMS thermal bubble printing head heating structure and manufacturing method thereof | 上海新微技术研发中心有限公司 | 2024-06-11 | — | — | CN | claimed |
| CN-114684777-B | Manufacturing method of MEMS thermal bubble printing head heating structure | 上海新微技术研发中心有限公司 | 2024-06-11 | — | — | CN | claimed |
| CN-114684777-A | Manufacturing method of MEMS (micro-electromechanical systems) thermal bubble printing head heating structure | 上海新微技术研发中心有限公司 | 2022-07-01 | — | — | CN | claimed |
| CN-114684776-A | MEMS thermal bubble printing head heating structure and manufacturing method thereof | 上海新微技术研发中心有限公司 | 2022-07-01 | — | — | CN | claimed |
| CN-101800173-A | Preparation method of tantalum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2010-08-11 | — | — | CN | claimed |
| US-20250227925-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-07-10 | — | — | US | disclosed |
| CN-119108273-A | Semiconductor structure and manufacturing method thereof | 浙江创芯集成电路有限公司 | 2024-12-10 | — | — | CN | disclosed |
| US-12021080-B2 | Semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-06-25 | — | — | US | disclosed |
| EP-4381915-A1 | DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE | International Business Machines Corporation (US) | 2024-06-12 | — | — | EP | disclosed |
| CN-114684777-B | Manufacturing method of MEMS thermal bubble printing head heating structure | 上海新微技术研发中心有限公司 | 2024-06-11 | — | — | CN | disclosed |
| CN-114684776-B | MEMS thermal bubble printing head heating structure and manufacturing method thereof | 上海新微技术研发中心有限公司 | 2024-06-11 | — | — | CN | disclosed |
| US-20240188448-A1 | MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2024-06-06 | — | — | US | disclosed |
| US-6432818-B1 | Method of using tantalum-aluminum-nitrogen material as diffusion barrier and adhesion layer in semiconductor devices | MICRON TECHNOLOGY, INC. | 2002-08-13 | — | — | US | disclosed |
| US-20020100981-A1 | Tantalum - aluminum - nitrogen material for semiconductor devices | MICRON TECHNOLOGY, INC. | 2002-08-01 | — | — | US | disclosed |
| WO-2002056340-A2 | SEMICONDUCTOR DEVICE WITH FUSE, RESISTOR, DIFFUSION BARRIER OR CAPACITOR OF A REFRACTORY METAL-SILICON-NITROGEN COMPOUND | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-07-18 | — | — | WO | disclosed |
| US-6404057-B1 | Tantalum - aluminum - nitrogen material for semiconductor devices | MICRON TECHNOLOGY, INC. | 2002-06-11 | — | — | US | disclosed |
| US-6133636-A | Tantalum-aluminum-nitrogen material for semiconductor devices | MICRON TECHNOLOGY, INC. (US) | 2000-10-17 | — | — | US | disclosed |
| US-6133636-A | Tantalum-aluminum-nitrogen material for semiconductor devices | MICRON TECHNOLOGY, INC. (US) | 2000-10-17 | — | — | US | disclosed |
| US-5892281-A | Tantalum-aluminum-nitrogen material for semiconductor devices | MICRON TECHNOLOGY, INC. (US) | 1999-04-06 | — | — | US | disclosed |
| US-5892281-A | Tantalum-aluminum-nitrogen material for semiconductor devices | MICRON TECHNOLOGY, INC. (US) | 1999-04-06 | — | — | US | disclosed |