Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4841349 | 0.98 | FFAR3 (0.36) | FFAR3TSHRALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL1022151 | 0.85 | FFAR3 (0.42) | FFAR3TSHRALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL2216131 | 0.82 | FFAR3 (0.40) | FFAR3TSHRALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL901732 | 0.77 | TDP1 (0.33) | FFAR3ALDH1A1 | |
| SCHEMBL2545646 | 0.76 | ALDH1A1 (0.41) | FFAR3TSHRALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL2468705 | 0.73 | CES2 (0.39) | — | |
| SCHEMBL27580351 | 0.73 | DGAT1 (0.45) | — | |
| Acetoacetic Acid SCHEMBL4622738 | 0.71 | FFAR3 (0.36) | FFAR3TSHRALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL4854338 | 0.70 | — | — | |
| SCHEMBL4140338 | 0.69 | TDP1 (0.42) | FFAR3ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7118928-B2 | Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices | UNIVERSITY OF CINCINNATI (US) | 2006-10-10 | — | — | US | disclosed |
| US-20040106222-A1 | Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices | UNIVERSITY OF CINCINNATI | 2004-06-03 | — | — | US | disclosed |