SCHEMBL60422

SCHEMBL60422

CC1(C)C2CCC1(CS(=O)(=O)ON1C(=O)c3ccc4ccccc4c3C1=O)C(=O)C2

nearest known ligand 0.48

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.48
MEN1 O00255 3/20 0.48
CYP1A2 P05177 2/20 0.48
CYP2C19 P33261 2/20 0.48
SMN1; SMN2 Q16637 2/20 0.47
ALDH1A1 P00352 2/20 0.46
TSHR P16473 1/20 0.46
HSD17B10 Q99714 1/20 0.46
CXCR3 P49682 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
CYP2D6 P10635 1/20 0.42
CYP2C9 P11712 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL452144 0.87 KMT2A (0.56) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL8756323 0.83 KMT2A (0.48) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL18962226 0.83 KMT2A (0.50) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL4545352 0.83 KMT2A (0.50) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL3981589 0.83 KMT2A (0.45) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL452153 0.80 CYP1A2 (0.55) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL3829292 0.80 ALDH1A1 (0.49) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL5552230 0.78 KMT2A (0.55) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL17617812 0.78 KMT2A (0.42) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2
SCHEMBL17231422 0.78 KMT2A (0.44) KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 502 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240077802-A1 METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-03-07 US claimed
US-11626293-B2 Method of manufacturing a semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-04-11 US claimed
US-20220230889-A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-07-21 US claimed
US-8557943-B2 Nanostructured organosilicates from thermally curable block copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-10-15 US claimed
US-8426113-B2 Chemically amplified silsesquioxane resist compositions INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-04-23 US claimed
US-20120277339-A1 Nanostructured Organosilicates from Thermally Curable Block Copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-01 US claimed
WO-2012148659-A2 NANOSTRUCTURED ORGANOSILICATES FROM THERMALLY CURABLE BLOCK COPOLYMERS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-01 WO claimed
US-8262961-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-11 US claimed
US-8128832-B2 Processes and materials for step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-06 US claimed
US-20120040289-A1 CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-02-16 US claimed
EP-1938149-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS International Business Machines Corporation (US) 2008-07-02 EP claimed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US claimed
US-20070298176-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2007-12-27 US claimed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US claimed
WO-2007039346-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-04-12 WO claimed
US-20070051697-A1 Processes and materials for step and flash imprint lithography GLOBALFOUNDRIES INC. (KY) 2007-03-08 US claimed
US-6365321-B1 COPOLYMER WITH ACRYLATE HAVING ACID LABILE GROUP, HOMOGENOUSLY BLENDED WITH PHENOLIC POLYMER WHICH IS PARTIALLY OR WHOLLY PROTECTED INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-04-02 US claimed
EP-0605089-B1 Photoresist composition IBM (US) 1999-01-07 EP claimed
US-5492793-A Photoresist composition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1996-02-20 US claimed
EP-0605089-A2 Photoresist composition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-07-06 EP claimed