SCHEMBL604579

SCHEMBL604579

C=CCn1c2ccccc2c2cc(C=C)ccc21

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 4/20 0.48
KDM4E B2RXH2 3/20 0.48
POLB P06746 2/20 0.48
PKM P14618 1/20 0.48
SRC P12931 2/20 0.46
PTGER4 P35408 2/20 0.46
NPC1 O15118 2/20 0.44
ATM Q13315 2/20 0.44
L3MBTL1 Q9Y468 2/20 0.44
RAB9A P51151 1/20 0.44
ALDH1A1 P00352 5/20 0.44
HPGD P15428 4/20 0.44
MEN1 O00255 3/20 0.43
KMT2A Q03164 3/20 0.43
LMNA P02545 2/20 0.43
SMN1; SMN2 Q16637 2/20 0.43
TSHR P16473 2/20 0.43
USP2 O75604 2/20 0.43
MAPT P10636 2/20 0.43
HSD17B10 Q99714 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8158727 0.92 MAPT (0.40) HTTKDM4EPOLBPKMSRC
SCHEMBL605080 0.90 ALDH1A1 (0.44) HTTKDM4EPOLBPKMNPC1
SCHEMBL7132029 0.88 PTGER4 (0.60) HTTKDM4EPOLBPKMSRC
SCHEMBL553110 0.84 ALDH1A1 (0.49) HTTKDM4EPOLBPTGER4NPC1
SCHEMBL146503 0.84 CYP1A2 (0.56) HTTKDM4EPOLBNPC1RAB9A
SCHEMBL766095 0.84 KDM4E (0.67) HTTKDM4EPOLBPKMSRC
SCHEMBL31454256 0.84 KDM4E (0.67) HTTKDM4EPOLBPKMSRC
SCHEMBL4604142 0.83 PTGER4 (0.50) HTTKDM4EPOLBPTGER4NPC1
SCHEMBL30874765 0.83 PTGER4 (0.50) HTTKDM4EPOLBPTGER4NPC1
SCHEMBL25841829 0.81 CYP19A1 (0.64) HTTKDM4EPOLBPKMSRC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116333685-A Method for producing composition for polishing display glass substrate and method for polishing display substrate using the composition (株)伊诺肯公司 2023-06-27 CN disclosed
US-20150191607-A1 Anti-fouling Paints and Coatings REACTIVE SURFACES, LTD (US) 2015-07-09 US disclosed
US-20140196631-A1 VISUAL ASSAYS FOR COATINGS INCORPORATING BIOACTIVE ENZYMES FOR CATALYTIC FUNCTIONS REACTIVE SURFACE, LTD. (US) 2014-07-17 US disclosed
EP-1369906-B1 POLISHING COMPOUND AND METHOD FOR POLISHING SUBSTRATE HITACHI CHEMICAL CO LTD (JP) 2012-06-27 EP disclosed
US-20120097194-A1 Polymeric Coatings Incorporating Bioactive Enzymes for Catalytic Function REACTIVE SURFACES, LTD. (US) 2012-04-26 US disclosed
EP-2418258-A1 Polishing slurry and method of polishing substrate Hitachi Chemical Company, Ltd. (JP) 2012-02-15 EP disclosed
US-20110250626-A1 Visual Assays for Coatings Incorporating Bioactive Enzymes for Catalytic Functions REACTIVE SURFACES, LTD. (US) 2011-10-13 US disclosed
US-20110240064-A1 Polymeric Coatings Incorporating Bioactive Enzymes for Cleaning a Surface REACTIVE SURFACES, LTD. (US) 2011-10-06 US disclosed
US-8002860-B2 CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive HITACHI CHEMICAL CO., LTD. (JP) 2011-08-23 US disclosed
US-20100210745-A1 Molecular Healing of Polymeric Materials, Coatings, Plastics, Elastomers, Composites, Laminates, Adhesives, and Sealants by Active Enzymes REACTIVE SURFACES, LTD. (US) 2010-08-19 US disclosed
US-20090253355-A1 CMP ABRASIVE, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE KOYAMA NAOYUKI 2009-10-08 US disclosed
US-7410409-B1 Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound HITACHI CHEMICAL CO., LTD. (JP) 2008-08-12 US disclosed
US-20070270085-A1 CHEMICAL MECHANICAL POLISHING SLURRY, CMP PROCESS AND ELECTRONIC DEVICE PROCESS HITACHI CHEMICAL COMPANY, LTD. (JP) 2007-11-22 US disclosed
US-20070169421-A1 CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive KOYAMA NAOYUKI 2007-07-26 US disclosed
WO-2007018376-A1 PRODUCING METHOD FOR CERIUM-BASED GLASS POLISHING MATERIAL AND METHOD FOR USING THE SAME JOUNG IN (KR) 2007-02-15 WO disclosed
EP-1691401-A2 CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive Hitachi Chemical Co., Ltd. (JP) 2006-08-16 EP disclosed
US-6786945-B2 Polishing compound and method for polishing substrate HITACHI CHEMICAL CO., LTD. (JP) 2004-09-07 US disclosed
US-20040065022-A1 Polishing compound and method for polishing substrate HITACHI CHEMICAL CO., LTD. (JP) 2004-04-08 US disclosed
EP-1369906-A1 POLISHING COMPOUND AND METHOD FOR POLISHING SUBSTRATE HITACHI CHEMICAL COMPANY, LTD. (JP) 2003-12-10 EP disclosed
EP-1205965-A1 ABRASIVE COMPOUND FOR CMP, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE COMPOUND HITACHI CHEMICAL COMPANY, LTD. (JP) 2002-05-15 EP disclosed